Inventor

Jun Chen

Inventor
Hubei, CN

Overview

24→
Patents
2002–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices28%
H10BElectronic memory devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10DInorganic electric semiconductor devices6%
G11CStatic stores4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
A61BDiagnosis1%
H03MCoding1%
H10KOrganic electric solid-state devices1%
PatentTitleYear
10,867,678Three-dimensional memory devices202010,847,528Memory cell structure of a three-dimensional memory device202010,840,125Memory structure and method for forming the same202010,833,042Hybrid bonding using dummy bonding contacts202010,804,287Three-dimensional memory devices and fabricating methods thereof202010,804,279Source structure of three-dimensional memory device and method for forming the same202010,796,993Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202010,784,225Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same202010,748,851Hybrid bonding using dummy bonding contacts and dummy interconnects202010,679,941Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202010,680,003Staircase structure for memory device202010,672,711Word line contact structure for three-dimensional memory devices and fabrication methods thereof202010,651,087Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202010,644,015Memory cell structure of a three-dimensional memory device202010,607,887Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202010,593,690Hybrid bonding contact structure of three-dimensional memory device202010,580,788Methods for forming three-dimensional memory devices202010,515,975Method for forming dual-deck channel hole structure of three-dimensional memory device201910,431,688Thin-film transistor structure with three-dimensional fin-shape channel and preparation method thereof201910,431,626Image sensor devices201910,283,452Three-dimensional memory devices having a plurality of NAND strings201910,147,732Source structure of three-dimensional memory device and method for forming the same20189,142,590'Image sensor device and manufacturing method thereof'20156,500,261'Apparatus for preventing misplacement of a cassette pod onto a process machine'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002Patents assigned to TAIWAN SEMICONDUCTOR MFG (1)· patent assignee history
2002Based in Kaohsiung, TW· patent location history
2015–2019Patents assigned to SILICON OPTRONICS INC (2)· patent assignee history
2015–2019Based in Hsinchu, TW· patent location history
2018–2020Patents assigned to YANGTZE MEMORY TECH CO LTD (19)· patent assignee history
2018–2020Based in Hubei, CN· patent location history
2019Patents assigned to SUN YAT SEN UNIV CARNEGIE MELLON UNIV SHUNDE INTERNATIONAL JOINT RESEARCH INSTITUTE (1)· patent assignee history
2019Patents assigned to UNIV SUN YAT SEN (1)· patent assignee history
2019Based in Guangzhou, CN· patent location history
2020Based in Wuhan, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
YANGTZE MEMORY TECH CO LTD192018–2020
SILICON OPTRONICS INC22015–2019
SUN YAT SEN UNIV CARNEGIE MELLON UNIV SHUNDE INTERNATIONAL JOINT RESEARCH INSTITUTE12019
TAIWAN SEMICONDUCTOR MFG12002
UNIV SUN YAT SEN12019
Locations
LocationPatentsSpan
Hubei, CN132018–2020
Wuhan, CN72020
Hsinchu, TW22015–2019
Guangzhou, CN12019
Kaohsiung, TW12002