Inventor

Young-Gwan Kim

Inventor
Seoul, KR

Overview

19→
Patents
1998–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices11%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
A43BCharacteristic features of footwear5%
A43DMachines, tools, equipment or methods for manufacturing or repairing footwear5%
G06FElectric digital data processing5%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use5%
A01KAnimal husbandry2%
B01FMixing, e.g. dissolving, emulsifying or dispersing2%
PatentTitleYear
9,829,952Processor that has its operating frequency controlled in view of power consumption during operation and semiconductor device including the same20179,753,532'Image processing method and image processing apparatus'20179,380,837'Automated strobel printing'20169,155,357'Automated strobel printing'20159,024,584'Method and system for setting sequential identification to multi-slave in battery pack'20158,849,549'Method of controlling combustion of diesel engine'20148,341,811'Snap ring for fishing implements'20136,679,623'Apparatus for agitating liquid hardener used for improving soft ground'2004D0478096'Liquid hardener agitator'20036,528,371'Method for fabricating semiconductor device'20036,465,262'Method for manufacturing a semiconductor device'20026,127,248'Fabrication method for semiconductor device'20006,103,562'Method of making semiconductor device with decreased channel width and constant threshold voltage'20006,096,609'ESD protection circuit and method for fabricating same using a plurality of dummy gate electrodes as a salicide mask for a drain'20006,063,652'Silicon-on-insulator semiconductor device improving electrostatic discharge protection capability and fabrication method thereof'20006,060,399'Method for isolating semiconductor devices'20005,994,200'Trench isolation structure of a semiconductor device and a method for thereof'19995,960,298'Method of fabricating semiconductor device having trench isolation structure'19995,736,276'Method for fabricating phase inverted mask'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2000Patents assigned to LG SEMICON CO LTD (7)· patent assignee history
1998–2003Based in Chungcheongbuk-do, KR· patent location history
1999Based in Cheongju-si, KR· patent location history
2000–2003Patents assigned to HYUNDAI ELECTRONICS IND (2)· patent assignee history
2000Based in Cheongju, KR· patent location history
2003–2004Patents assigned to KEUBYUCK ENGINEERING CO LTD (2)· patent assignee history
2003–2017Based in Seoul, KR· patent location history
2013–2015Patents assigned to KIM YOUNG GWAN (3)· patent assignee history
2013–2016Based in Busan, KR· patent location history
2015–2016Patents assigned to NIKE INC (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
LG SEMICON CO LTD71998–2000
KIM YOUNG GWANself32013–2015
HYUNDAI ELECTRONICS IND22000–2003
KEUBYUCK ENGINEERING CO LTD22003–2004
NIKE INC22015–2016
Locations
LocationPatentsSpan
Seoul, KR42003–2017
Chungcheongbuk-do, KR41998–2003
Busan, KR32013–2016
Cheongju, KR32000
Cheongju-si, KR21999