Inventor
Horatio S. Wildman
Inventor
Wappingers Falls, NY, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1028%
H10DInorganic electric semiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
C23CCoating metallic material9%
Y10TTechnical subjects covered by former us classification7%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
G01RMeasuring electric variables2%
H10BElectronic memory devices2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
8,101,518'Method and process for forming a self-aligned silicide contact'20127,772,866'Structure and method of mapping signal intensity to surface voltage for integrated circuit inspection'20107,544,610'Method and process for forming a self-aligned silicide contact'20097,474,107'Buried short location determination using voltage contrast inspection'20096,784,485'Diffusion barrier layer and semiconductor device containing same'20046,726,996'Laminated diffusion barrier'20046,646,345'Method for forming Co-W-P-Au films'20036,509,265'Process for manufacturing a contact barrier'20036,417,567'Flat interface for a metal-silicon contract barrier film'20026,413,866'Method of forming a solute-enriched layer in a substrate surface and article formed thereby'20026,388,327'Capping layer for improved silicide formation in narrow semiconductor structures'20026,339,007'Capacitor stack structure and method of fabricating description'20026,323,128'Method for forming Co-W-P-Au films'20016,180,521'Process for manufacturing a contact barrier'20016,124,639'Flat interface for a metal-silicon contact barrier film'20006,068,923'Use of argon sputtering to modify surface properties by thin film deposition'20006,022,801'Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film'20005,956,573'Use of argon sputtering to modify surface properties by thin film deposition'19995,401,677'Method of metal silicide formation in integrated circuit devices'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2012Patents assigned to IBM (19)· patent assignee history
1995–2012Based in Wappingers Falls, NY, US· patent location history
2001–2003Based in Wappinger Falls, NY, US· patent location history
2012Patents assigned to CABRAL JR CYRIL (1)· patent assignee history
2012Patents assigned to COBB MICHAEL A (1)· patent assignee history
2012Patents assigned to FRYE ASA (1)· patent assignee history
2012Patents assigned to KNARR RANDOLPH F (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 19 | 1995–2012 |
| CABRAL JR CYRIL | 1 | 2012 |
| COBB MICHAEL A | 1 | 2012 |
| FRYE ASA | 1 | 2012 |
| KNARR RANDOLPH F | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wappingers Falls, New York, US | 17 | 1995–2012 |
| Wappinger Falls, New York, US | 2 | 2001–2003 |