Inventor
Fu-Ting Sung
Inventor
Yangmei Taoyuan, TW
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices32%
H10NElectric solid-state devices not otherwise provided for30%
H10BElectronic memory devices20%
H10DInorganic electric semiconductor devices8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
G11CStatic stores3%
PatentTitleYear
11,114,610Semiconductor structure, electrode structure and method of forming the same202111,050,021Method for manufacturing resistive random access memory structure202111,018,299Memory cell having resistance variable film and method of making the same202110,957,852Resistance variable memory structure and method of forming the same202110,840,438Reversed stack MTJ202010,825,825Flash memory structure202010,720,568Semiconductor structure and method of manufacturing the same202010,629,811Resistance variable memory structure and method of forming the same202010,529,916Reversed stack MTJ202010,516,107Memory cell having resistance variable film and method of making the same201910,510,952Storage device with composite spacer and method for manufacturing the same201910,475,998Resistive random access memory structure201910,468,587Semiconductor structure, electrode structure and method of forming the same201910,454,021Semiconductor structure and method of manufacturing the same201910,355,011Method for forming flash memory structure201910,164,184Resistance variable memory structure and method of forming the same201810,158,069Memory cell having resistance variable film and method of making the same20189,876,169RRAM devices and methods20189,859,295'Method for forming flash memory structure'20189,837,605Memory cell having resistance variable film and method of making the same20179,837,606Resistance variable memory structure and method of forming the same20179,806,254'Storage device with composite spacer and method for manufacturing the same'20179,711,713'Semiconductor structure, electrode structure and method of forming the same'20179,614,145'Reversed stack MTJ'20179,564,448'Flash memory structure'20179,543,511'RRAM device'20179,419,218'Resistance variable memory structure and method of forming the same'20169,356,231'MRAM device and fabrication method thereof'20169,306,158'MRAM device and fabrication method thereof'20169,209,392'RRAM cell with bottom electrode'20159,196,825'Reversed stack MTJ'20159,178,144'RRAM cell with bottom electrode'20159,172,033'MRAM device and fabrication method thereof'20159,048,316'Flash memory structure and method of forming the same'20159,040,951'Resistance variable memory structure and method of forming the same'20158,921,959'MRAM device and fabrication method thereof'20148,872,149'RRAM structure and process using composite spacer'20148,822,237'Hole first hardmask definition'20148,569,849'Hole first hardmask definition'20138,313,959'Hole first hardmask definition'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (9)· patent assignee history
2012–2014Patents assigned to LIU SHIH-CHANG (3)· patent assignee history
2012–2014Patents assigned to SUNG FU-TING (3)· patent assignee history
2012–2014Patents assigned to TSAI CHIA-SHIUNG (3)· patent assignee history
2012–2021Based in Yangmei Taoyuan, TW· patent location history
2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (31)· patent assignee history
2017–2021Based in Taoyuan, TW· patent location history
2017–2021Based in Taoyuan County, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 31 | 2015–2021 |
| TAIWAN SEMICONDUCTOR MFG | 9 | 2012–2016 |
| LIU SHIH-CHANG | 3 | 2012–2014 |
| SUNG FU-TINGself | 3 | 2012–2014 |
| TSAI CHIA-SHIUNG | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yangmei Taoyuan, TW | 27 | 2012–2021 |
| Taoyuan, TW | 7 | 2017–2021 |
| Taoyuan County, TW | 6 | 2017–2021 |