Inventor
Sang-Yong Yoon
Inventor
Seoul, KR
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores51%
G06FElectric digital data processing29%
LOC287%
H03MCoding5%
H01LSemiconductor devices2%
H10BElectronic memory devices2%
LOC152%
PatentTitleYear
D0919827Scalp treatment apparatus2021D0919826Scalp treatment apparatus2021D0913609Washing machine2021D0909595Scalp treatment apparatus202110,714,194Memory system including a memory device, and methods of operating the memory system and memory device202010,635,532Method of controlling error check and correction (ECC) of non-volatile memory device and memory system performing the same202010,217,517Memory system including a memory device, and methods of operating the memory system and the memory device20199,852,795Methods of operating nonvolatile memory devices, and memory systems including nonvolatile memory devices20179,812,213'Flash memory, flash memory system and operating method of the same'20179,728,279'Memory system including a memory device, and methods of operating the memory system and the memory device'20179,715,341'Operating a memory device using a program order stamp to control a read voltage'20179,502,137'Method and device for optimizing log likelihood ratio (LLR) used for nonvolatile memory device and for correcting errors in nonvolatile memory device'20169,495,518'Method of reliably reading data stored in multi-level cell (MLC) non-volatile memory'20169,412,471'Method of reading data from a nonvolatile memory device, nonvolatile memory device, and method of operating a memory system'20169,406,394'Flash memory device using adaptive program verification scheme and related method of operation'20169,342,447'Data storage system and method of operating data storage system'20169,330,775'Flash memory, flash memory system and operating method of the same'20169,183,944'Method of writing data in non-volatile memory device'20159,093,171'Method of operating a nonvolatile memory device having read disturbed page'20159,076,534'Flash memory device using adaptive program verification scheme and related method of operation'20158,995,189'Method and apparatus for managing open blocks in nonvolatile memory device'20158,990,481'Method of operating nonvolatile memory devices storing randomized data generated by copyback operation'20158,767,475'Method of programming a nonvolatile memory device'20148,526,245'Method and apparatus for managing open blocks in nonvolatile memory device'20138,411,502'Flash memory device using adaptive program verification scheme and related method of operation'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (22)· patent assignee history
2013–2016Patents assigned to YOON SANG YONG (3)· patent assignee history
2013–2021Based in Seoul, KR· patent location history
2014–2017Patents assigned to YOON SANG-YONG (5)· patent assignee history
2015Based in Hwasung, KR· patent location history
2016–2017Patents assigned to KIM KYUNG-RYUN (3)· patent assignee history
2016Based in Daejeon, KR· patent location history
2021Patents assigned to LG ELECTRONICS INC (3)· patent assignee history
2021Based in Suwon-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 22 | 2013–2021 |
| YOON SANG-YONGself | 5 | 2014–2017 |
| KIM KYUNG-RYUN | 3 | 2016–2017 |
| LG ELECTRONICS INC | 3 | 2021 |
| YOON SANG YONGself | 3 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 22 | 2013–2021 |
| Suwon-si, KR | 1 | 2021 |
| Daejeon, KR | 1 | 2016 |
| Hwasung, KR | 1 | 2015 |