Inventor
Jin Wen Dong
Inventor
Wuhan, CN
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
H10BElectronic memory devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
G11CStatic stores4%
H10DInorganic electric semiconductor devices4%
H10NElectric solid-state devices not otherwise provided for4%
PatentTitleYear
10,867,678Three-dimensional memory devices202010,847,528Memory cell structure of a three-dimensional memory device202010,840,125Memory structure and method for forming the same202010,692,756Method for forming dual damascene interconnect structure202010,644,015Memory cell structure of a three-dimensional memory device202010,515,975Method for forming dual-deck channel hole structure of three-dimensional memory device201910,497,708Memory structure and forming method thereof2019Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2019–2020Patents assigned to YANGTZE MEMORY TECH CO LTD (7)· patent assignee history
2019–2020Based in Wuhan, CN· patent location history
2019–2020Based in Hubei, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 7 | 2019–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wuhan, CN | 4 | 2019–2020 |
| Hubei, CN | 3 | 2019–2020 |