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Inventor

Chang-Ching Kin

Inventor
Poughkeepsie, NY, US

Overview

3→
Patents
1993–1998
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests25%
C03CChemical composition of glasses, glazes or vitreous enamels13%
H05KPrinted circuits13%
PatentTitleYear
5,770,523'Method for removal of photoresist residue after dry metal etch'19985,284,549'Selective fluorocarbon-based RIE process utilizing a nitrogen additive'19945,268,068'High aspect ratio molybdenum composite mask method'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–1994Patents assigned to IBM (2)· patent assignee history
1993–1994Based in Poughkeepsie, NY, US· patent location history
1998Patents assigned to TAIWAN SEMICONDUCTOR MFG (1)· patent assignee history
1998Based in Hsinchu County, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM21993–1994
TAIWAN SEMICONDUCTOR MFG11998
Locations
LocationPatentsSpan
Poughkeepsie, New York, US21993–1994
Hsinchu County, TW11998