LexDanaLexDanabeta
Inventor

Toshihide Kikkawa

Inventor
Kawasaki, JP

Overview

86→
Patents
1992–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 86 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H01LSemiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
C30BSingle-crystal growth3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%
H03FAmplifiers2%
B82YSpecific uses or applications of nanostructures1%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
PatentTitleYear
9,818,840'Semiconductor device and manufacturing method of semiconductor device'20179,640,648'Semiconductor device and manufacturing method of semiconductor device'20179,608,083'Semiconductor device'20179,536,967'Recessed ohmic contacts in a III-N device'20179,496,380'Compound semiconductor device comprising compound semiconductor layered structure having buffer layer and method of manufacturing the same'20169,478,539'Compound semiconductor device and method of manufacturing the same'20169,437,723'Manufacturing method of semiconductor device including indium'20169,412,812'Compound semiconductor device and method of manufacturing the same'20169,368,359'Method of manufacturing compound semiconductor device'20169,331,190'Compound semiconductor device and method of manufacturing the same'20169,299,822'Semiconductor device and manufacturing method of semiconductor device'20169,276,072'Semiconductor device and method for manufacturing semiconductor device'20169,276,100'Semiconductor device having a gate recess structure'20169,224,848'Compound semiconductor device and manufacturing method of the same'20159,184,272'Compound semiconductor device having overhang-shaped gate'20159,147,761'Compound semiconductor device'20159,142,658'Compound semiconductor device and method of manufacturing the same'20159,034,722'Method of removing a compound semiconductor layer from a compound semiconductor device'20158,969,159'Compound semiconductor device and manufacturing method thereof'20158,933,489'Compound semiconductor device and manufacturing method of the same'20158,912,571'Compound semiconductor device including first film on compound semiconductor layer and second film on first film and method of manufacturing the same'20148,901,610'Compound semiconductor device'20148,896,022'Method of manufacturing compound semiconductor device'20148,866,157'Semiconductor device and method of fabricating the semiconductor device'20148,841,706'Compound semiconductor device and manufacturing method of the same'20148,816,408'Compound semiconductor device and manufacturing method thereof'20148,765,554'Compound semiconductor device and method for manufacturing the same'20148,658,482'Compound semiconductor device and method for fabricating the same'20148,637,903'Compound semiconductor device and manufacturing method of the same'20148,633,494'Semiconductor device and method for manufacturing semiconductor device'20148,614,461'Compound semiconductor device'20138,603,871'Compound semiconductor device and its manufacture method'20138,603,903'Semiconductor device manufacturing method'20138,586,433'Compound semiconductor device and manufacturing method thereof'20138,581,335'Compound semiconductor device and manufacturing method thereof'20138,507,329'Compound semiconductor device and method of manufacturing the same'20138,466,029'Compound semiconductor device and manufacturing method of the same'20138,440,549'Compound semiconductor device including aln layer of controlled skewness'20138,426,260'Compound semiconductor device and method of manufacturing the same'20138,426,892'Compound semiconductor device and method of manufacturing the same'20138,357,602'Compound semiconductor device and method of manufacturing the same'20138,344,419'Compound semiconductor device and manufacturing method of the same'20138,294,181'Compound semiconductor device and method of manufacturing the same'20128,278,688'Compound semiconductor device and manufacturing method thereof'20128,264,006'Compound semiconductor device including AIN layer of controlled skewness'20128,264,005'Compound semiconductor device including AIN layer of controlled skewness'20128,193,539'Compound semiconductor device using SiC substrate and its manufacture'20128,183,572'Compound semiconductor device and its manufacture method'20128,173,529'Semiconductor device manufacturing method'20128,044,492'Compound semiconductor device including AIN layer of controlled skewness'20118,030,638'Quasi single crystal nitride semiconductor layer grown over polycrystalline SiC substrate'20118,030,164'Compound semiconductor structure'20117,989,278'Compound semiconductor device and method for fabricating the same'20117,948,062'Semiconductor device and method for manufacturing semiconductor device'20117,875,535'Compound semiconductor device using SiC substrate and its manufacture'20117,859,020'Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifier'20107,838,903'Compound semiconductor device and the fabricating method of the same'20107,800,133'Semiconductor device and manufacturing method of the same'20107,795,622'Compound semiconductor device'20107,777,251'Compound semiconductor device and doherty amplifier using compound semiconductor device'20107,663,162'Compound semiconductor device and doherty amplifier using compound semiconductor device'20107,638,819'Compound semiconductor device and the fabricating method of the same'20097,560,323'Compound semiconductor device and method of fabricating the same'20097,494,855'Compound semiconductor device and method for fabricating the same'20097,407,859'Compound semiconductor device and its manufacture'20087,224,004'Compound semiconductor device and method of fabricating the same'20077,132,699'Compound semiconductor device and its manufacture'20067,002,189'Compound semiconductor device'20066,501,105'Compound semiconductor device'20026,465,816'Semiconductor device and manufacturing method of the same'20026,121,153'Semiconductor device having a regrowth crystal region'20006,020,604'Compound semiconductor device'20005,955,742'Semiconductor device formed on a substrate having an off-angle surface and a fabrication process thereof'19995,952,672'Semiconductor device and method for fabricating the same'19995,945,690'Compound semiconductor device'19995,844,303'Semiconductor device having improved electronic isolation'19985,837,056'Method for growing III-V group compound semiconductor crystal'19985,818,078'Semiconductor device having a regrowth crystal region'19985,762,706'Method of forming compound semiconductor device'19985,751,028'Semiconductor device formed on a substrate having an off-angle surface'19985,656,076'Method for growing III-V group compound semiconductor crystal'19975,569,953'Semiconductor device having an isolation region enriched in oxygen'19965,521,404'Group III-V interdiffusion prevented hetero-junction semiconductor device'19965,480,833'Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof'19965,460,654'Apparatus for generating raw material gas used in apparatus for growing thin film'19955,128,275'Method for fabricating a semiconductor device including a semi-insulating semiconductor layer'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2017Patents assigned to FUJITSU LTD (79)· patent assignee history
1995–2017Based in Kawasaki, JP· patent location history
2012–2016Patents assigned to KIKKAWA TOSHIHIDE (27)· patent assignee history
2012–2014Patents assigned to IMANISHI KENJI (10)· patent assignee history
2012–2014Patents assigned to KANAMURA MASAHITO (5)· patent assignee history
2013–2016Based in Machida, JP· patent location history
2015–2017Patents assigned to TRANSPHORM JAPAN INC (6)· patent assignee history
2015Based in Akiruno, JP· patent location history
2016Based in Aizuwakamatsu, JP· patent location history
2017Based in Goleta, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FUJITSU LTD791992–2017
KIKKAWA TOSHIHIDEself272012–2016
IMANISHI KENJI102012–2014
TRANSPHORM JAPAN INC62015–2017
KANAMURA MASAHITO52012–2014
Locations
LocationPatentsSpan
Kawasaki, JP691995–2017
Machida, JP112013–2016
Goleta, California, US32017
Aizuwakamatsu, JP12016
Akiruno, JP12015