Inventor
Klaus Schruefer
Inventor
Baldham, DE
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices41%
H10BElectronic memory devices16%
H01LSemiconductor devices14%
H10NElectric solid-state devices not otherwise provided for11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
PatentTitleYear
9,437,593'Silicided semiconductor structure and method of forming the same'20169,240,462'Field-effect transistor with local source/drain insulation and associated method of production'20169,219,063'Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor'20159,012,995'Semiconductor device including FinFET device'20158,952,487'Electronic circuit arrangement'20158,865,592'Silicided semiconductor structure and method of forming the same'20148,629,500'Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor'20148,552,475'Apparatus of memory array using FinFETs'20138,318,553'Vertical diode using silicon formed by selective epitaxial growth'20128,310,027'Electronic device and manufacturing method thereof'20128,183,120'Method of making bipolar FinFET technology'20128,106,424'Field effect transistor with a heterostructure'20128,067,808'Apparatus of memory array using FinFETs'20118,039,904'Apparatus of memory array using finfets'20117,888,775'Vertical diode using silicon formed by selective epitaxial growth'20117,824,993'Field-effect transistor with local source/drain insulation and associated method of production'20107,804,110'Field effect transistor with a heterostructure'20107,723,786'Apparatus of memory array using FinFETs'20107,491,612'Field effect transistor with a heterostructure and associated production method'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2016Patents assigned to INFINEON TECHNOLOGIES AG (18)· patent assignee history
2009–2016Based in Baldham, DE· patent location history
2010–2016Patents assigned to SCHRUEFER KLAUS (10)· patent assignee history
2010–2014Patents assigned to KAKOSCHKE RONALD (5)· patent assignee history
2012–2014Patents assigned to PACHA CHRISTIAN (3)· patent assignee history
2014–2016Patents assigned to HOLZ JUERGEN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 18 | 2009–2016 |
| SCHRUEFER KLAUSself | 10 | 2010–2016 |
| KAKOSCHKE RONALD | 5 | 2010–2014 |
| PACHA CHRISTIAN | 3 | 2012–2014 |
| HOLZ JUERGEN | 2 | 2014–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Baldham, DE | 19 | 2009–2016 |