Inventor
Shinya Sasagawa
Inventor
Chigasaki, JP
Overview
Patents· 190 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices31%
H01LSemiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H10BElectronic memory devices5%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
H10KOrganic electric solid-state devices2%
G11CStatic stores2%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
PatentTitleYear
11,101,293Semiconductor device and method for manufacturing the semiconductor device202111,024,743Semiconductor device and manufacturing method thereof202111,004,727Method for fabricating electrode and semiconductor device202110,923,580Semiconductor device and method for fabricating the same202110,879,381Semiconductor device and manufacturing method thereof202010,665,613Semiconductor device and method for manufacturing the semiconductor device202010,658,389Semiconductor device, manufacturing method thereof, and electronic device202010,644,039Wiring layer and manufacturing method therefor202010,468,506Semiconductor device and method for fabricating the same201910,460,984Method for fabricating electrode and semiconductor device201910,446,671Semiconductor device and manufacturing method thereof201910,424,676Semiconductor device and manufacturing method thereof201910,367,096Semiconductor device, manufacturing method thereof, module, and electronic device201910,347,769Thin film transistor with multi-layer source/drain electrodes201910,304,864Wiring layer and manufacturing method therefor201910,256,348Semiconductor device and method for manufacturing semiconductor device201910,229,906Semiconductor device including insulating film having opening portion and conductive film in the opening portion201910,224,433Method for manufacturing semiconductor device201910,211,240Method for manufacturing semiconductor device201910,199,508Semiconductor device and method for manufacturing the same201910,181,531Semiconductor device including transistor having low parasitic capacitance201910,164,120Method for manufacturing semiconductor device201810,153,375Semiconductor device and method for manufacturing semiconductor device201810,141,452Semiconductor device, manufacturing method thereof, and electronic device201810,134,879Semiconductor device and method for fabricating the same201810,079,295Semiconductor device and method for manufacturing thereof201810,050,062Semiconductor device and method for manufacturing the same201810,043,914Semiconductor device comprising a plurality of oxide semiconductor layers201810,008,587Semiconductor device and manufacturing method thereof201810,002,884Semiconductor device20189,991,395Semiconductor device and manufacturing method thereof20189,954,112Semiconductor device and manufacturing method thereof20189,935,203Semiconductor device and manufacturing method thereof20189,922,994'Semiconductor device and method for manufacturing the semiconductor device'20189,911,973'Power storage device'20189,905,657'Semiconductor device and method for manufacturing semiconductor device'20189,875,910Wiring board, semiconductor device, and manufacturing methods thereof20189,871,059'Semiconductor device and method for manufacturing the same'20189,871,145'Semiconductor device, manufacturing method thereof, and electronic device'20189,865,712'Semiconductor device and manufacturing method thereof'20189,853,069Method for manufacturing semiconductor device20179,853,165Method for manufacturing semiconductor device20179,852,904Method for manufacturing semiconductor device20179,842,940'Semiconductor device'20179,837,551Semiconductor device20179,837,513Semiconductor device and manufacturing method thereof20179,831,238Semiconductor device including insulating film having opening portion and conductive film in the opening portion20179,825,177'Manufacturing method of a semiconductor device using multiple etching mask'20179,824,898'Semiconductor device and method for manufacturing the same'20179,818,849'Manufacturing method of semiconductor device with conductive film in opening through multiple insulating films'20179,812,467'Semiconductor device comprising an oxide semiconductor'20179,805,954'Semiconductor device and manufacturing method thereof'20179,780,229'Method for manufacturing semiconductor device'20179,773,919'Semiconductor device and manufacturing method thereof'20179,773,820'Wiring layer and manufacturing method therefor'20179,773,915'Semiconductor device and manufacturing method thereof'20179,768,318'Semiconductor device and method for manufacturing the same'20179,761,736'Semiconductor device and method for manufacturing semiconductor device'20179,728,648'Semiconductor device and method for manufacturing semiconductor device'20179,711,349'Processing method of stacked-layer film and manufacturing method of semiconductor device'20179,698,280'Semiconductor device'20179,691,789'Method for manufacturing semiconductor device'20179,691,904'Semiconductor device'20179,691,905'Semiconductor device, manufacturing method thereof, and electronic device'20179,647,129'Semiconductor device'20179,640,642'Semiconductor device and manufacturing method thereof'20179,608,123'Method for manufacturing semiconductor device'20179,601,632'Semiconductor device and method for fabricating the same'20179,570,622'Semiconductor device and method for manufacturing the same'20179,559,193'Semiconductor device and method for manufacturing semiconductor device'20179,553,202'Semiconductor device, manufacturing method thereof, and electronic device'20179,496,405'Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer'20169,466,615'Semiconductor device'20169,455,337'Method for manufacturing semiconductor device'20169,454,048'Liquid crystal display device and manufacturing method of liquid crystal display device'20169,437,454'Wiring board, semiconductor device, and manufacturing methods thereof'20169,437,744'Semiconductor device and manufacturing method thereof'20169,431,545'Semiconductor device and method for manufacturing the same'20169,419,018'Semiconductor device and method for manufacturing the same'20169,419,145'Semiconductor device'20169,379,136'Semiconductor device and manufacturing method thereof'20169,373,708'Method for manufacturing semiconductor device'20169,373,525'Method for manufacturing semiconductor device'20169,368,636'Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers'20169,330,909'Semiconductor device'20169,305,774'Method for processing thin film and method for manufacturing semiconductor device'20169,299,852'Semiconductor device and method for manufacturing the same'20169,299,815'Method for manufacturing semiconductor device and semiconductor device'20169,287,410'Semiconductor device'20169,287,405'Semiconductor device comprising oxide semiconductor'20169,287,117'Semiconductor device comprising an oxide semiconductor'20169,281,405'Semiconductor device and method for manufacturing the same'20169,263,259'Semiconductor device comprising an oxide semiconductor'20169,252,103'Method for manufacturing semiconductor device'20169,252,286'Semiconductor device and method for manufacturing the same'20169,230,826'Etching method using mixed gas and method for manufacturing semiconductor device'20169,214,565'Semiconductor device and method for manufacturing semiconductor device'20159,202,929'Thin film transistor and method for manufacturing the same'20159,196,744'Semiconductor device'20159,171,959'Semiconductor device and manufacturing method thereof'20159,166,019'Semiconductor device and method of manufacturing the same'20159,159,841'Method for manufacturing semiconductor device'20159,153,436'Method for manufacturing semiconductor device'20159,123,751'Method for manufacturing semiconductor device'20159,105,749'Semiconductor device and manufacturing method thereof'20159,093,539'Semiconductor device and method for manufacturing the same'20159,059,219'Semiconductor device and method for manufacturing semiconductor device'20159,048,321'Semiconductor device and manufacturing method thereof'20159,023,684'Semiconductor device and manufacturing method thereof'20159,006,803'Semiconductor device and method for manufacturing thereof'20159,006,736'Semiconductor device'20159,006,732'Manufacturing method of semiconductor device'20158,999,773'Processing method of stacked-layer film and manufacturing method of semiconductor device'20158,987,727'Method for manufacturing semiconductor device and semiconductor device'20158,980,685'Method for manufacturing thin film transistor using multi-tone mask'20158,969,144'Method for manufacturing semiconductor device'20158,956,929'Method for manufacturing semiconductor device'20158,946,812'Semiconductor device and manufacturing method thereof'20158,932,913'Manufacturing method of semiconductor device'20158,916,868'Semiconductor device and method for manufacturing semiconductor device'20148,912,040'Method for manufacturing semiconductor device'20148,906,737'Method for manufacturing semiconductor device'20148,901,554'Semiconductor device including channel formation region including oxide semiconductor'20148,878,177'Semiconductor device and method for manufacturing semiconductor device'20148,834,989'Semiconductor device and manufacturing method thereof'20148,829,522'Thin film transistor'20148,828,844'Manufacturing method of SOI substrate'20148,822,088'Power storage device'20148,809,992'Semiconductor device and manufacturing method thereof'20148,796,682'Method for manufacturing a semiconductor device'20148,790,961'Semiconductor device and method for manufacturing the same'20148,785,241'Semiconductor device and manufacturing method thereof'20148,778,729'Manufacturing method of semiconductor device'20148,748,241'Semiconductor device and method for manufacturing the same'20148,741,702'Method for manufacturing semiconductor device'20148,729,546'Method for manufacturing semiconductor device'20148,723,768'Display device'20148,703,560'Methods for manufacturing thin film transistor'20148,686,417'Oxide semiconductor device formed by using multi-tone mask'20148,669,663'Wiring over substrate, semiconductor device, and methods for manufacturing thereof'20148,664,118'Semiconductor device and method for manufacturing the same'20148,653,513'Semiconductor device with sidewall insulating layer'20148,653,520'Semiconductor device and method for manufacturing the same'20148,637,354'Semiconductor device and manufacturing method thereof'20148,637,864'Semiconductor device and method of manufacturing the same'20148,624,400'Semiconductor device and method for manufacturing the same'20148,604,472'Semiconductor device'20138,597,992'Transistor and manufacturing method of the same'20138,592,879'Method for manufacturing semiconductor device'20138,593,603'Display device and electronic device'20138,581,413'Semiconductor device and method for manufacturing the same'20138,575,608'Thin film transistor and manufacturing method thereof'20138,525,170'Thin film transistor and manufacturing method thereof'20138,501,554'Methods for manufacturing thin film transistor and display device'20138,492,840'Semiconductor device having an oxide semiconductor layer'20138,476,122'Etching method and method for manufacturing semiconductor device'20138,476,744'Thin film transistor with channel including microcrystalline and amorphous semiconductor regions'20138,436,403'Semiconductor device including transistor provided with sidewall and electronic appliance'20138,431,449'Manufacturing method of semiconductor device'20138,383,491'Method for manufacturing semiconductor substrate'20138,383,487'Method for manufacturing SOI substrate'20138,349,671'Methods for manufacturing thin film transistor and display device'20138,343,849'Method for manufacturing SOI substrate'20138,247,308'Method for manufacturing SOI substrate'20128,242,494'Method for manufacturing thin film transistor using multi-tone mask'20128,236,635'Method for manufacturing semiconductor device'20128,227,278'Methods for manufacturing thin film transistor and display device'20128,207,025'Manufacturing method of semiconductor device'20128,154,096'Photoelectric conversion element and manufacturing method of photoelectric conversion element'20128,143,168'Etching method and manufacturing method of semiconductor device'20128,067,772'Semiconductor device and manufacturing method thereof'20118,003,483'Method for manufacturing SOI substrate'20117,998,801'Manufacturing method of thin film transistor having altered semiconductor layer'20117,989,351'Method for manufacturing a wiring over a substrate'20117,968,884'Semiconductor device and manufacturing method thereof'20117,969,012'Semiconductor device and method for manufacturing the same'20117,915,075'Method for manufacturing semiconductor device'20117,875,506'Etching method and manufacturing method of semiconductor device'20117,791,154'Photoelectric conversion element and manufacturing method of photoelectric conversion element'20107,763,981'Semiconductor device and method for manufacturing the same'20107,709,368'Semiconductor device and method for manufacturing the same'20107,622,785'Photoelectric conversion element and manufacturing method of photoelectric conversion element'20097,579,270'Method for manufacturing a semiconductor device'20097,560,315'Manufacturing method for semiconductor device'20097,538,039'Method for manufacturing a wiring over a substrate'20097,485,579'Method of manufacturing a semiconductor device'20097,253,044'Manufacturing method for semiconductor device'20077,172,931'Manufacturing method for semiconductor device'20077,163,852'Manufacturing method for semiconductor device'20077,144,819'Method for manufacturing a semiconductor device'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2021Patents assigned to SEMICONDUCTOR ENERGY LAB (187)· patent assignee history
2006–2021Based in Kanagawa, JP· patent location history
2009–2017Based in Atsugi, JP· patent location history
2011–2016Patents assigned to SASAGAWA SHINYA (60)· patent assignee history
2011–2016Patents assigned to SUZAWA HIDEOMI (24)· patent assignee history
2011–2019Based in Chigasaki, JP· patent location history
2012–2016Patents assigned to KURATA MOTOMU (19)· patent assignee history
2012–2016Patents assigned to ISHIZUKA AKIHIRO (13)· patent assignee history
2014Based in Kangawa, JP· patent location history
2021Based in Yokohama-shi, Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 187 | 2006–2021 |
| SASAGAWA SHINYAself | 60 | 2011–2016 |
| SUZAWA HIDEOMI | 24 | 2011–2016 |
| KURATA MOTOMU | 19 | 2012–2016 |
| ISHIZUKA AKIHIRO | 13 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Chigasaki, JP | 92 | 2011–2019 |
| Kanagawa, JP | 91 | 2006–2021 |
| Atsugi, JP | 5 | 2009–2017 |
| Yokohama-shi, Kanagawa, JP | 1 | 2021 |
| Kangawa, JP | 1 | 2014 |