LexDanaLexDanabeta
Inventor

Guenole Jan

Inventor
San Jose, CA, US

Overview

80→
Patents
2013–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 80 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for20%
G11CStatic stores19%
H01LSemiconductor devices16%
H01FMagnets13%
H10BElectronic memory devices8%
G01RMeasuring electric variables6%
G11BInformation storage based on relative movement between record carrier and transducer4%
H10DInorganic electric semiconductor devices3%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
11,043,632Ion beam etching process design to minimize sidewall re-deposition202111,031,547Reduction of capping layer resistance area product for magnetic device applications202111,024,798Protective passivation layer for magnetic tunnel junctions202111,001,919Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation202110,978,124Method and circuits for programming STT-MRAM cells for reducing back-hopping202110,957,851Magnetic layer for magnetic random access memory (MRAM) by moment enhancement202110,950,782Nitride diffusion barrier structure for spintronic applications202110,868,235Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM202010,867,651Initialization process for magnetic random access memory (MRAM) production202010,797,225Dual magnetic tunnel junction (DMTJ) stack design202010,797,232Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions202010,788,561Method for measuring saturation magnetization of magnetic films and multilayer stacks202010,784,310Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices202010,763,428Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications202010,761,154Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices202010,754,000Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films202010,699,765Methods and circuits for programming STT-MRAM cells for reducing back-hopping202010,665,773Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)202010,658,577Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy202010,648,069Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation202010,522,752Magnetic layer for magnetic random access memory (MRAM) by moment enhancement201910,522,746Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)201910,522,745Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions201910,522,747Fully compensated synthetic ferromagnet for spintronics applications201910,522,744High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications201910,509,074Electrical testing apparatus for spintronics devices201910,490,733Seed layer for multilayer magnetic materials201910,475,564Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation201910,439,132Protective passivation layer for magnetic tunnel junctions201910,431,736Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy201910,401,464Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers201910,325,639Initialization process for magnetic random access memory (MRAM) production201910,312,433Reduction of capping layer resistance area product for magnetic device applications201910,230,044Fully compensated synthetic ferromagnet for spintronics applications201910,193,056Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM201910,193,062MgO insertion into free layer for magnetic memory applications201910,115,892Multilayer structure for reducing film roughness in magnetic devices201810,102,896Adaptive reference scheme for magnetic memory applications201810,014,465Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy20189,966,529MgO insertion into free layer for magnetic memory applications20189,842,988'Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications'20179,805,816'Implementation of a one time programmable memory using a MRAM stack design'20179,780,299'Multilayer structure for reducing film roughness in magnetic devices'20179,747,965'Adaptive reference scheme for magnetic memory applications'20179,673,385'Seed layer for growth of <111> magnetic materials'20179,490,054'Seed layer for multilayer magnetic materials'20169,478,733'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20169,472,752'High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications'20169,466,789'Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications'20169,437,268'Free layer with out-of-plane anisotropy for magnetic device applications'20169,425,387'Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing'20169,391,265'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20169,373,777'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20169,373,780'Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications'20169,373,778'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20169,343,132'MRAM write pulses to dissipate intermediate state domains'20169,252,710'Free layer with out-of-plane anisotropy for magnetic device applications'20169,082,960'Fully compensated synthetic antiferromagnet for spintronics applications'20159,048,411'Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications'20159,006,704'Magnetic element with improved out-of-plane anisotropy for spintronic applications'20158,987,849'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20158,987,848'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20158,987,847'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20158,981,503'STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain'20158,962,348'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20158,946,834'High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications'20158,921,961'Storage element for STT MRAM applications'20148,917,536'Adaptive reference scheme for magnetic memory applications'20148,900,884'MTJ element for STT MRAM'20148,878,323'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20148,871,365'High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications'20148,860,156'Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM'20148,852,760'Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer'20148,710,603'Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications'20148,698,260'Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications'20148,698,261'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20148,592,927'Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications'20138,541,855'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20138,508,006'Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications'20138,470,462'Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2019Patents assigned to JAN GUENOLE (16)· patent assignee history
2013–2015Patents assigned to KULA WITOLD (10)· patent assignee history
2013–2021Based in San Jose, CA, US· patent location history
2014–2016Patents assigned to HEADWAY TECHNOLOGIES INC (25)· patent assignee history
2016–2021Patents assigned to HEADWAY TECH INC (22)· patent assignee history
2019–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (30)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD302019–2021
HEADWAY TECHNOLOGIES INC252014–2016
HEADWAY TECH INC222016–2021
JAN GUENOLEself162013–2019
KULA WITOLD102013–2015
Locations
LocationPatentsSpan
San Jose, California, US802013–2021