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Inventor

Nicholas C. Dalida

Inventor
Fremont, CA, US

Overview

7→
Patents
2006–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 7 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1070%
H10DInorganic electric semiconductor devices30%
PatentTitleYear
8,586,456'Use of CL2 and/or HCL during silicon epitaxial film formation'20137,960,256'Use of CL2 and/or HCL during silicon epitaxial film formation'20117,737,007'Methods to fabricate MOSFET devices using a selective deposition process'20107,732,305'Use of Cl2 and/or HCl during silicon epitaxial film formation'20107,682,940'Use of Cl2 and/or HCl during silicon epitaxial film formation'20107,439,142'Methods to fabricate MOSFET devices using a selective deposition process'20087,132,338'Methods to fabricate MOSFET devices using selective deposition process'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2013Patents assigned to APPLIED MATERIALS INC (7)· patent assignee history
2006–2013Based in Fremont, CA, US· patent location history
2013Patents assigned to CHEN XIAO (1)· patent assignee history
2013Patents assigned to DALIDA NICHOLAS C (1)· patent assignee history
2013Patents assigned to KIM YIHWAN (1)· patent assignee history
2013Patents assigned to LI XIAOWEI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC72006–2013
CHEN XIAO12013
DALIDA NICHOLAS Cself12013
KIM YIHWAN12013
LI XIAOWEI12013
Locations
LocationPatentsSpan
Fremont, California, US72006–2013