Inventor
CHRISTELLE VEYTIZOU
Inventor
FR
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1026%
H10NElectric solid-state devices not otherwise provided for11%
H03HImpedance networks, e.g. resonant circuits5%
H10DInorganic electric semiconductor devices5%
PatentTitleYear
12,581,922Method for forming a high resistivity handle support for composite substrate202612,119,258Semiconductor structure comprising a buried porous layer for RF applications202411,974,505Hybrid structure for surface acoustic wave device and associated production method202411,688,627Substrate for radiofrequency applications and associated manufacturing method202311,373,856Support for a semiconductor structure202211,251,265Carrier for a semiconductor structure2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to SOITEC SILICON ON INSULATOR (6)· patent assignee history
2022Patents assigned to CENTRE NAT RECH SCIENT (1)· patent assignee history
2022Patents assigned to UNIV CLAUDE BERNARD LYON (1)· patent assignee history
2022–2026Based in FR· patent location history
2024Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SOITEC SILICON ON INSULATOR | 6 | 2022–2026 |
| CENTRE NAT RECH SCIENT | 1 | 2022 |
| COMMISSARIAT ENERGIE ATOMIQUE | 1 | 2024 |
| UNIV CLAUDE BERNARD LYON | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| FR | 6 | 2022–2026 |