Inventor
Karthik Padmanabhan
Inventor
San Jose, CA, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H01LSemiconductor devices38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H03KPulse technique2%
PatentTitleYear
11,038,022Super-junction corner and termination structure with graded sidewalls202111,031,465Semiconductor device incorporating epitaxial layer field stop zone202110,931,276Combined IGBT and superjunction MOSFET device with tuned switching speed202110,755,931Semiconductor device and method of forming including superjunction structure formed using angled implant process202010,644,102SGT superjunction MOSFET structure202010,580,868Super-junction corner and termination structure with improved breakdown and robustness202010,446,679Method for forming a lateral super-junction MOSFET device and termination structure201910,276,387Semiconductor device including superjunction structure formed using angled implant process201910,243,072Method for forming a lateral super-junction MOSFET device and termination structure20199,991,380Lateral super-junction MOSFET device and termination structure20189,722,073'Lateral super-junction MOSFET device and termination structure'20179,595,609'Semiconductor device including superjunction structure formed using angled implant process'20179,530,885'Normally on high voltage switch'20169,508,805'Termination design for nanotube MOSFET'20169,450,045'Method for forming lateral super-junction structure'20169,397,154'Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area'20169,312,381'Lateral super-junction MOSFET device and termination structure'20169,171,949'Semiconductor device including superjunction structure formed using angled implant process'20159,153,653'Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area'20159,082,790'Normally on high voltage switch'20158,907,414'High voltage fast recovery trench diode'20148,710,585'High voltage fast recovery trench diode'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2020Patents assigned to ALPHA & OMEGA SEMICONDUCTOR (17)· patent assignee history
2014–2015Patents assigned to BOBDE MADHUR (2)· patent assignee history
2014–2015Patents assigned to PADMANABHAN KARTHIK (2)· patent assignee history
2014Patents assigned to HU JUN (1)· patent assignee history
2014Based in Longwood, FL, US· patent location history
2015–2021Based in San Jose, CA, US· patent location history
2020–2021Patents assigned to ALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ALPHA & OMEGA SEMICONDUCTOR | 17 | 2014–2020 |
| ALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD | 5 | 2020–2021 |
| BOBDE MADHUR | 2 | 2014–2015 |
| PADMANABHAN KARTHIKself | 2 | 2014–2015 |
| HU JUN | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 20 | 2015–2021 |
| Longwood, Florida, US | 2 | 2014 |