Inventor
Yasuo Ashizawa
Inventor
Kawasaki, JP
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth18%
H10DInorganic electric semiconductor devices18%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests18%
H01QAntennas, i.e. radio aerials9%
H03DDemodulation or transference of modulation from one carrier to another9%
H04BTransmission9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
PatentTitleYear
6,072,203'Semiconductor device'20005,898,909'Ultra high frequency radio communication apparatus'19995,319,223'High electron mobility transistor'19945,168,077'Method of manufacturing a p-type compound semiconductor thin film containing a III-group element and a v-group element by metal organics chemical vapor deposition'19924,664,063'Molecular beam epitaxial growth apparatus'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–2000Patents assigned to TOSHIBA KK (5)· patent assignee history
1987Based in Yokohama, JP· patent location history
1992–2000Based in Kawasaki, JP· patent location history
1999Based in Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 5 | 1987–2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawasaki, JP | 3 | 1992–2000 |
| Kanagawa, JP | 1 | 1999 |
| Yokohama, JP | 1 | 1987 |