Inventor

Glenn B. Alers

Inventor
Santa Cruz, CA, US

Overview

21→
Patents
1998–2012
Patent span
Electricity
Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10BElectronic memory devices13%
C23CCoating metallic material5%
G01KMeasuring temperature5%
G01RMeasuring electric variables5%
H03HImpedance networks, e.g. resonant circuits5%
PatentTitleYear
8,278,216'Selective capping of copper'20128,039,379'Nanoparticle cap layer'20118,030,777'Protection of Cu damascene interconnects by formation of a self-aligned buffer layer'20117,994,640'Nanoparticle cap layer'20117,396,759'Protection of Cu damascene interconnects by formation of a self-aligned buffer layer'20086,830,942'Method for processing silicon workpieces using hybrid optical thermometer system'20046,750,495'Damascene capacitors for integrated circuits'20046,559,499'Process for fabricating an integrated circuit device having capacitors with a multilevel metallization'20036,500,499'Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors'20026,403,415'Semiconductor device having a metal barrier layer for a dielectric material having a high dielectric constant and a method of manufacture thereof'20026,320,479'Magnetostrictive surface acoustic wave devices having optimized transducers'20016,320,244'Integrated circuit device having dual damascene capacitor'20016,303,426'Method of forming a capacitor having a tungsten bottom electrode in a semiconductor wafer'20016,284,663'Method for making field effect devices and capacitors with thin film dielectrics and resulting devices'20016,271,596'Damascene capacitors for integrated circuits'20016,265,260'Method for making an integrated circuit capacitor including tantalum pentoxide'20016,046,657'Magnetostrictive surface acoustic wave device and microelectronic circuit including same'20006,043,662'Detecting defects in integrated circuits'20006,001,741'Method for making field effect devices and capacitors with improved thin film dielectrics and resulting devices'19996,002,113'Apparatus for processing silicon devices with improved temperature control'19995,804,975'Detecting breakdown in dielectric layers'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2004Patents assigned to LUCENT TECHNOLOGIES INC (6)· patent assignee history
1998–2004Based in Chatham, NJ, US· patent location history
1999–2004Based in Santa Cruz, CA, US· patent location history
2001–2002Patents assigned to AGERE SYST GUARDIAN CORP (5)· patent assignee history
2001Patents assigned to AGERE SYST OPTOELECTRONICS (1)· patent assignee history
2003–2004Patents assigned to AGERE SYSTEMS INC (2)· patent assignee history
2008–2012Patents assigned to NOVELLUS SYSTEMS INC (5)· patent assignee history
2008–2011Based in Fountain Valley, CA, US· patent location history
2011–2012Based in Scotts Valley, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
LUCENT TECHNOLOGIES INC61998–2004
AGERE SYST GUARDIAN CORP52001–2002
NOVELLUS SYSTEMS INC52008–2012
AGERE SYSTEMS INC22003–2004
AGERE SYST OPTOELECTRONICS12001
Locations
LocationPatentsSpan
Santa Cruz, California, US91999–2004
Chatham, New Jersey, US71998–2004
Scotts Valley, California, US32011–2012
Fountain Valley, California, US22008–2011