Inventor
Steven P. Caliendo
Inventor
Ashby, MA, US
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material28%
H01JElectric discharge tubes or discharge lamps28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G01BMeasuring length, thickness or similar linear dimensions4%
G05BControl or regulating systems in general4%
H01LSemiconductor devices4%
H10DInorganic electric semiconductor devices4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
10,256,095Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system20199,502,209'Multi-step location specific process for substrate edge profile correction for GCIB system'20169,105,443'Multi-step location specific process for substrate edge profile correction for GCIB system'20158,298,432'Method and system for adjusting beam dimension for high-gradient location specific processing'20128,293,126'Method and system for multi-pass correction of substrate defects'20127,917,241'Method and system for increasing throughput during location specific processing of a plurality of substrates'20117,564,024'Methods and apparatus for assigning a beam intensity profile to a gas cluster ion beam used to process workpieces'20097,521,089'Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers'20096,626,186'Method for stabilizing the internal surface of a PECVD process chamber'20036,562,708'Method for incorporating silicon into CVD metal films'20036,482,477'Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers thereto'20026,455,414'Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayers'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2009Patents assigned to TOKYO ELECTRON LTD (5)· patent assignee history
2002–2003Based in Gold Canyon, AZ, US· patent location history
2009–2019Patents assigned to TEL EPION INC (7)· patent assignee history
2009–2019Based in Ashby, MA, US· patent location history
2012Patents assigned to CALIENDO STEVEN P (2)· patent assignee history
2012Patents assigned to HOFMEESTER NICOLAUS J (2)· patent assignee history
2012Patents assigned to MACCRIMMON RUAIRIDH (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEL EPION INC | 7 | 2009–2019 |
| TOKYO ELECTRON LTD | 5 | 2002–2009 |
| CALIENDO STEVEN Pself | 2 | 2012 |
| HOFMEESTER NICOLAUS J | 2 | 2012 |
| MACCRIMMON RUAIRIDH | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ashby, Massachusetts, US | 8 | 2009–2019 |
| Gold Canyon, AZ, US | 4 | 2002–2003 |