Inventor
Hironori Daikoku
Inventor
Susono, JP
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth54%
Y10TTechnical subjects covered by former us classification22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H01LSemiconductor devices5%
H10DInorganic electric semiconductor devices5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
LOC133%
PatentTitleYear
10,968,535SiC single crystal production method and production apparatus202110,640,885SiC single crystal production method and production apparatus202010,450,671SiC single crystal and method for producing same201910,145,025Method for producing SiC single crystal201810,119,199Method for producing SiC single crystal201810,100,432Apparatus for producing SiC single crystal and method for producing SiC single crystal201810,081,883SiC single crystal production method and production apparatus20189,920,449'Production method of SiC single crystal'20189,896,778'Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus'20189,822,468'Method for producing SiC single crystal'20179,783,911'Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus'20179,732,441'Production apparatus and production method of SiC single crystal'20179,708,734'Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution'20179,702,056'Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus'20179,631,295'Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method'20179,624,599'SiC single crystal manufacturing method using alternating states of supersaturation'20179,617,655'Manufacturing apparatus of SiC single crystal and method for manufacturing SiC single crystal'20179,523,156'SiC single crystal ingot and production method therefor'20169,512,540'Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere'20169,388,508'Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal'20169,080,254'Method of producing SiC single crystal'20157,608,816'Light receiving module incorporating shield cover'2009D0564975'Light receiving module with a shield cover'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2009Based in Kyoto, JP· patent location history
2015–2021Patents assigned to TOYOTA MOTOR CO LTD (20)· patent assignee history
2015–2017Patents assigned to DAIKOKU HIRONORI (10)· patent assignee history
2015–2021Based in Susono, JP· patent location history
2016–2019Patents assigned to NIPPON STEEL & SUMITOMO METAL CORP (11)· patent assignee history
2016–2017Patents assigned to KUSUNOKI KAZUHIKO (8)· patent assignee history
2016–2017Patents assigned to KADO MOTOHISA (7)· patent assignee history
2017Based in Toyota, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOYOTA MOTOR CO LTD | 20 | 2015–2021 |
| NIPPON STEEL & SUMITOMO METAL CORP | 11 | 2016–2019 |
| DAIKOKU HIRONORIself | 10 | 2015–2017 |
| KUSUNOKI KAZUHIKO | 8 | 2016–2017 |
| KADO MOTOHISA | 7 | 2016–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Susono, JP | 20 | 2015–2021 |
| Kyoto, JP | 2 | 2008–2009 |
| Toyota, JP | 1 | 2017 |