Inventor
Hongqing Shan
Inventor
Cupertino, CA, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1039%
H01JElectric discharge tubes or discharge lamps20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
B65GTransport or storage devices, e.g. conveyors for loading or tipping, shop conveyor systems or pneumatic tube conveyors7%
C23CCoating metallic material7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
B08BCleaning in general2%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
H05KPrinted circuits2%
PatentTitleYear
8,668,422'Low cost high throughput processing platform'20147,658,586'Advanced low cost high throughput processing platform'20107,563,068'Low cost high throughput processing platform'20097,316,761'Apparatus for uniformly etching a dielectric layer'20086,913,652'Gas flow division in a wafer processing system having multiple chambers'20056,905,624'Interferometric endpoint detection in a substrate etching process'20056,863,835'Magnetic barrier for plasma in chamber exhaust'20056,849,193'Highly selective process for etching oxide over nitride using hexafluorobutadiene'20056,831,742'Monitoring substrate processing using reflected radiation'20046,829,056'Monitoring dimensions of features at different locations in the processing of substrates'20046,797,189'Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon'20046,773,544'Magnetic barrier for plasma in chamber exhaust'20046,686,293'Method of etching a trench in a silicon-containing dielectric material'20046,613,689'Magnetically enhanced plasma oxide etch using hexafluorobutadiene'20036,602,434'Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window'20036,521,082'Magnetically enhanced plasma apparatus and method with enhanced plasma uniformity and enhanced ion energy control'20036,451,703'Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas'20026,440,864'Substrate cleaning process'20026,387,287'Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window'20026,362,109'Oxide/nitride etching having high selectivity to photoresist'20026,326,307'Plasma pretreatment of photoresist in an oxide etch process'20016,232,236'Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2008Patents assigned to APPLIED MATERIALS INC (13)· patent assignee history
2001Patents assigned to APPLLIED MATERIALS INC (1)· patent assignee history
2001–2014Based in Cupertino, CA, US· patent location history
2001–2005Based in San Jose, CA, US· patent location history
2009–2014Patents assigned to MATTSON TECH INC (3)· patent assignee history
2014Patents assigned to BARKER DAVID (1)· patent assignee history
2014Patents assigned to DEVINE DANIEL J (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 13 | 2001–2008 |
| MATTSON TECH INC | 3 | 2009–2014 |
| APPLLIED MATERIALS INC | 1 | 2001 |
| BARKER DAVID | 1 | 2014 |
| DEVINE DANIEL J | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Cupertino, California, US | 16 | 2001–2014 |
| San Jose, California, US | 6 | 2001–2005 |