Inventor
Yusuke Maeyama
Inventor
Hanno, JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H01LSemiconductor devices30%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
PatentTitleYear
9,960,228Wide gap semiconductor device and method of manufacturing the same20189,496,366'Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film'20168,937,319'Schottky barrier diode'20157,544,552'Method for manufacturing junction semiconductor device'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2018Patents assigned to SHINDENGEN ELECTRIC MFG (4)· patent assignee history
2009Patents assigned to HONDA MOTOR CO LTD (1)· patent assignee history
2009–2016Based in Hanno, JP· patent location history
2015Patents assigned to ARAKI YOSHITAKA (1)· patent assignee history
2015Patents assigned to MAEYAMA YUSUKE (1)· patent assignee history
2015Patents assigned to OSAWA RYOHEI (1)· patent assignee history
2015Based in Iruma, JP· patent location history
2018Based in Saitama, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHINDENGEN ELECTRIC MFG | 4 | 2009–2018 |
| ARAKI YOSHITAKA | 1 | 2015 |
| HONDA MOTOR CO LTD | 1 | 2009 |
| MAEYAMA YUSUKEself | 1 | 2015 |
| OSAWA RYOHEI | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hanno, JP | 2 | 2009–2016 |
| Saitama, JP | 1 | 2018 |
| Iruma, JP | 1 | 2015 |