Inventor
Randall J. Higuchi
Inventor
San Jose, CA, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for33%
H10BElectronic memory devices32%
H01LSemiconductor devices28%
C23CCoating metallic material5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
9,543,516'Method for forming a doped metal oxide for use in resistive switching memory elements'20179,425,394'Doped oxide dielectrics for resistive random access memory cells'20169,276,203'Resistive switching layers including Hf-Al-O'20169,246,099'Low-temperature deposition of nitrides by UV-assisted ALD or CVD'20169,246,096'Atomic layer deposition of metal oxides for memory applications'20169,065,040'Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition'20159,040,413'Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer'20159,018,068'Nonvolatile resistive memory element with a silicon-based switching layer'20159,018,037'Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices'20159,006,696'Metal aluminum nitride embedded resistors for resistive random memory access cells'20159,006,026'Atomic layer deposition of metal oxides for memory applications'20158,969,129'ReRAM cells including TaXSiYN embedded resistors'20158,883,557'Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition'20148,853,661'Metal aluminum nitride embedded resistors for resistive random memory access cells'20148,846,443'Atomic layer deposition of metal oxides for memory applications'20148,835,890'ReRAM cells including TaXSiYN embedded resistors'20148,802,492'Method for forming resistive switching memory elements'20148,791,445'Interfacial oxide used as switching layer in a nonvolatile resistive memory element'20148,741,698'Atomic layer deposition of zirconium oxide for forming resistive-switching materials'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2017Patents assigned to INTERMOLECULAR INC (19)· patent assignee history
2014–2017Patents assigned to SANDISK 3D LLC (13)· patent assignee history
2014–2017Patents assigned to TOSHIBA KK (13)· patent assignee history
2014Patents assigned to GOPAL VIDYUT (4)· patent assignee history
2014Patents assigned to HASHIM IMRAN (4)· patent assignee history
2014–2017Based in San Jose, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTERMOLECULAR INC | 19 | 2014–2017 |
| SANDISK 3D LLC | 13 | 2014–2017 |
| TOSHIBA KK | 13 | 2014–2017 |
| GOPAL VIDYUT | 4 | 2014 |
| HASHIM IMRAN | 4 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 19 | 2014–2017 |