Inventor
Yuriy Melnik
Inventor
Santa Clara, CA, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
C23CCoating metallic material16%
C30BSingle-crystal growth12%
H10HInorganic light-emitting semiconductor devices having potential barriers12%
H01LSemiconductor devices8%
Y10TTechnical subjects covered by former us classification8%
H10DInorganic electric semiconductor devices6%
F01DNon-positive displacement machines or engines, e.g. steam turbines4%
F05DIndexing scheme for aspects relating to non-positive-displacement machines or engines, gas-turbines or jet-propulsion plants4%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium2%
PatentTitleYear
11,015,252Protection of components from corrosion202110,794,853Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition202010,633,740Methods for depositing coatings on aerospace components20209,431,477'Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)'20169,303,318'Multiple complementary gas distribution assemblies'20168,980,002'Methods for improved growth of group III nitride semiconductor compounds'20158,853,086'Methods for pretreatment of group III-nitride depositions'20148,778,783'Methods for improved growth of group III nitride buffer layers'20148,568,529'HVPE chamber hardware'20138,507,304'Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)'20138,491,720'HVPE precursor source hardware'2013D0664172'Dome assembly for a deposition chamber'20128,183,132'Methods for fabricating group III nitride structures with a cluster tool'20128,138,069'Substrate pretreatment for subsequent high temperature group III depositions'20128,080,466'Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2021Patents assigned to APPLIED MATERIALS INC (15)· patent assignee history
2011–2016Patents assigned to MELNIK YURIY (11)· patent assignee history
2011–2016Patents assigned to KRYLIOUK OLGA (8)· patent assignee history
2011–2020Based in Santa Clara, CA, US· patent location history
2012–2016Patents assigned to ISHIKAWA TETSUYA (7)· patent assignee history
2012–2016Patents assigned to KOJIRI HIDEHIRO (6)· patent assignee history
2014–2021Based in San Jose, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 15 | 2011–2021 |
| MELNIK YURIYself | 11 | 2011–2016 |
| KRYLIOUK OLGA | 8 | 2011–2016 |
| ISHIKAWA TETSUYA | 7 | 2012–2016 |
| KOJIRI HIDEHIRO | 6 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Santa Clara, California, US | 9 | 2011–2020 |
| San Jose, California, US | 6 | 2014–2021 |