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Inventor

Mitsukuni Tsukihara

Inventor
Ehime, JP

Overview

26→
Patents
2001–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps52%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
G21KHandling of particles or ionising radiation not otherwise provided for4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light2%
G02BOptical elements, systems or apparatus2%
G05DSystems for controlling or regulating non-electric variables2%
H05HPlasma technique2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
9,502,210'Ion implanter, ion implantation method, and beam measurement apparatus'20169,449,791'Beam irradiation apparatus and beam irradiation method'20169,208,996'Ion implantation apparatus and ion implantation method'20158,759,801'Ion implantation apparatus and ion implantation method'20147,982,192'Beam processing apparatus'20117,851,772'Ion implantation apparatus and ion implantation method'20107,791,049'Ion implantation apparatus'20107,755,067'Ion implantation apparatus and method of converging/shaping ion beam used therefor'20107,718,980'Beam processing system and beam processing method'20107,687,782'Electrostatic beam deflection scanner and beam deflection scanning method'20107,597,531'Method of controlling mover device'20097,429,743'Irradiation system ion beam and method to enhance accuracy of irradiation'20087,411,709'Beam processing system and beam processing method'20087,361,892'Method to increase low-energy beam current in irradiation system with ion beam'20087,351,987'Irradiation system with ion beam'20087,315,034'Irradiation system with ion beam/charged particle beam'20087,304,319'Wafer charge compensation device and ion implantation system having the same'20077,276,711'Beam space-charge compensation device and ion implantation system having the same'20077,187,143'Mover device and semiconductor manufacturing apparatus and method'20077,138,641'Beam deflecting method, beam deflector for scanning, ion implantation method, and ion implantation system'20066,984,833'Ion implanter and method for controlling the same'20066,797,968'Ion beam processing method and apparatus therefor'20046,794,661'Ion implantation apparatus capable of increasing beam current'20046,635,889'Ion implantation apparatus suited for low energy ion implantation and tuning method for ion source system thereof'20036,573,517'Ion implantation apparatus'20036,242,747'Method and system for optimizing linac operational parameters'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2016Based in Ehime, JP· patent location history
2003–2007Patents assigned to SUMITOMO EATON NOVA (7)· patent assignee history
2007–2010Patents assigned to SEN CORP AN SHI AND AXCELIS CO (6)· patent assignee history
2008–2015Patents assigned to SEN CORP (5)· patent assignee history
2008–2011Patents assigned to SEN CORP AN SHI & AXCELIS CO (5)· patent assignee history
2009–2010Based in Saijo, JP· patent location history
2014Based in Tokyo, JP· patent location history
2016Patents assigned to SUMITOMO HEAVY IND ION TECH CO LTD (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO EATON NOVA72003–2007
SEN CORP AN SHI AND AXCELIS CO62007–2010
SEN CORP52008–2015
SEN CORP AN SHI & AXCELIS CO52008–2011
SUMITOMO HEAVY IND ION TECH CO LTD22016
Locations
LocationPatentsSpan
Ehime, JP232001–2016
Saijo, JP22009–2010
Tokyo, JP12014