Inventor
Hajime Yagi
Inventor
Tokyo, JP
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices27%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for4%
C30BSingle-crystal growth4%
B60QArrangement of signalling or lighting devices, the mounting or supporting thereof or circuits therefor, for vehicles in general3%
C08LCompositions of macromolecular compounds3%
C09JAdhesives3%
PatentTitleYear
8,384,741'Numerical-simulation-result display program, numerical-simulation-result display method, and numerical-simulation-result display system'20137,704,326'Deposition mask and manufacturing method thereof'20107,407,298'Vehicle door mirror with pulse modulation control'20087,281,822'Outside mirror apparatus for vehicle and illuminating unit for outside mirror apparatus'20077,220,030'Exterior mirror having lamp and exterior rear-view mirror having lamp'20077,095,082'Electrooptical device, substrate for driving electrooptical device and methods for making the same'20066,997,108'Plate-making type printing press, multi-color printing press and plate-making type printing method'20066,825,070'Electro-optical apparatus, driving substrate for an electro-optical apparatus and method of manufacturing them'20046,767,755'Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device'20046,696,309'Methods for making electrooptical device and driving substrate therefor'20046,645,835'Semiconductor film forming method and manufacturing method for semiconductor devices thereof'20036,521,525'Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same'20036,504,215'Electro-optical apparatus having a display section and a peripheral driving circuit section'20036,492,190'Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device'20026,399,429'Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device'20026,376,340'Methods for forming polycrystalline silicon film'20026,372,558'Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate'20026,351,010'Electrooptical device, substrate for driving electrooptical device and methods for making the same'20026,346,718'Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same'20026,103,558'Process for producing electrooptical apparatus and process for producing driving substrate for electrooptical apparatus'20006,080,643'Elimination of dehydrogenation step when forming a silicon thin film device by low-temperature laser-annealing'20005,435,243'Wetting apparatus and method for offset printing machines'19954,950,701'Bonding method and adhesive useful for the method'19904,793,886'Bonding method and adhesive useful for the method'19884,038,680'Semiconductor integrated circuit device'19774,032,957'Semiconductor device'19774,032,958'Semiconductor device'19774,032,956'Transistor circuit'19774,027,324'Bidirectional transistor'19774,007,478'Field effect transistor'19774,007,474'Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion'19774,000,506'Bipolar transistor circuit'19763,969,747'Complementary bipolar transistors with IIL type common base drivers'19763,968,511'Semiconductor device with additional carrier injecting junction adjacent emitter region'19763,946,422'Electret transducer having an electret of inorganic insulating material'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976–2013Patents assigned to SONY CORP (27)· patent assignee history
1976–2006Based in Tokyo, JP· patent location history
1988Patents assigned to CEMEDINE CO LTD (1)· patent assignee history
1990Patents assigned to CEMEDINE COMPANY LTD (1)· patent assignee history
1995–2006Patents assigned to MITSUBISHI HEAVY IND LTD (2)· patent assignee history
1995–2006Based in Mihara, JP· patent location history
2002–2013Based in Kanagawa, JP· patent location history
2004Based in Shinagawa-ku, JP· patent location history
2007–2008Patents assigned to ICHIKOH INDUSTRIES LTD (2)· patent assignee history
2007–2008Based in Isehara, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 27 | 1976–2013 |
| ICHIKOH INDUSTRIES LTD | 2 | 2007–2008 |
| MITSUBISHI HEAVY IND LTD | 2 | 1995–2006 |
| CEMEDINE CO LTD | 1 | 1988 |
| CEMEDINE COMPANY LTD | 1 | 1990 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 26 | 1976–2006 |
| Kanagawa, JP | 3 | 2002–2013 |
| Isehara, JP | 3 | 2007–2008 |
| Mihara, JP | 2 | 1995–2006 |
| Shinagawa-ku, JP | 1 | 2004 |