Inventor
Yong-jie WU
Inventor
TW
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
H01LSemiconductor devices20%
H10BElectronic memory devices20%
H10NElectric solid-state devices not otherwise provided for16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
B82YSpecific uses or applications of nanostructures3%
G11CStatic stores1%
PatentTitleYear
12,563,742Multi-gate selector switches for memory cells and methods of forming the same202612,507,419Memory cell device with thin-film transistor selector and methods for forming the same202512,349,368Memory device including a semiconducting metal oxide fin transistor and methods of forming the same202512,336,187Mobility enhancement by source and drain stress layer or implantation in thin film transistors202512,315,762Self-aligned lines and methods for fabricating the same202512,219,780High-density memory device with planar thin film transistor (TFT) selector and methods for making the same202512,219,778Multi-gate selector switches for memory cells and methods of forming the same202512,125,921Semiconducting metal oxide transistors having a patterned gate and methods for forming the same202412,114,511Semiconductor device, integrated circuit and method of manufacturing the same202412,075,633Vertical metal oxide semiconductor channel selector transistor and methods of forming the same202412,074,219Back channel field effect transistors using a pull back process and methods for forming the same202412,058,873Memory device including a semiconducting metal oxide fin transistor and methods of forming the same202411,968,840Tri-gate transistor and methods for forming the same202411,825,661Mobility enhancement by source and drain stress layer of implantation in thin film transistors202311,757,047Semiconducting metal oxide transistors having a patterned gate and methods for forming the same202311,737,288High-density memory device with planar thin film transistor (TFT) selector and methods for making the same202311,696,453Vertical metal oxide semiconductor channel selector transistor and methods of forming the same202311,581,366Memory cell device with thin-film transistor selector and methods for forming the same202311,374,057Vertical metal oxide semiconductor channel selector transistor and methods of forming the same2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (19)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 19 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 19 | 2022–2026 |