Inventor
Jessica Dechene
Inventor
Watervliet, NY, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices34%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1026%
H10DInorganic electric semiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
C23CCoating metallic material2%
PatentTitleYear
11,127,623Single diffusion cut for gate structures202110,832,952Selective recessing to form a fully aligned via202010,833,160Field-effect transistors with self-aligned and non-self-aligned contact openings202010,636,706Selective recessing to form a fully aligned via202010,586,733Multi-level air gap formation in dual-damascene structure202010,453,751Tone inversion method and structure for selective contact via patterning201910,325,819Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device201910,276,436Selective recessing to form a fully aligned via201910,269,654Methods, apparatus and system for replacement contact for a finFET device201910,224,239Multi-level air gap formation in dual-damascene structure201910,211,138Metal silicate spacers for fully aligned vias201910,204,797Methods, apparatus, and system for reducing step height difference in semiconductor devices201910,204,827Multi-level air gap formation in dual-damascene structure201910,049,974Metal silicate spacers for fully aligned vias20189,859,212'Multi-level air gap formation in dual-damascene structure'20189,754,942'Single spacer for complementary metal oxide semiconductor process flow'20179,748,146'Single spacer for complementary metal oxide semiconductor process flow'20179,450,095'Single spacer for complementary metal oxide semiconductor process flow'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2020Patents assigned to IBM (10)· patent assignee history
2016–2021Based in Watervliet, NY, US· patent location history
2019–2020Patents assigned to GLOBALFOUNDRIES INC (5)· patent assignee history
2019–2020Based in Latham, NY, US· patent location history
2019Based in Albany, NY, US· patent location history
2020Patents assigned to TESSERA INC (2)· patent assignee history
2021Patents assigned to GLOBALFOUNDRIES US INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 10 | 2016–2020 |
| GLOBALFOUNDRIES INC | 5 | 2019–2020 |
| TESSERA INC | 2 | 2020 |
| GLOBALFOUNDRIES US INC | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Watervliet, New York, US | 13 | 2016–2021 |
| Latham, New York, US | 3 | 2019–2020 |
| Albany, New York, US | 2 | 2019 |