Inventor
YANWEI SHI
Inventor
CN
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H01LSemiconductor devices20%
H10DInorganic electric semiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G11CStatic stores8%
PatentTitleYear
12,598,9653D NAND memory device with isolation trenches and fabrication method thereof202612,581,649Semiconductor device, fabrication method, and memory system202612,557,640Three dimensional (3D) memory device and fabrication method using self-aligned multiple patterning and airgaps202612,543,319Semiconductor device including reduced-size transistors, manufacturing method thereof, and NAND memory device202612,446,265Semiconductor devices and methods for manufacturing the same, and NAND memory devices202512,376,307Semiconductor structure, fabrication method and three-dimensional memory202512,362,223Semiconductor structure, fabrication method and three-dimensional memory202512,324,198Semiconductor device and manufacture method thereof202512,278,209Peripheral circuit having recess gate transistors and method for forming the same202512,183,623Semiconductor devices and methods for fabricating the same202412,089,413Peripheral circuit having recess gate transistors and method for forming the same2024Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2024–2026Patents assigned to YANGTZE MEMORY TECH CO LTD (11)· patent assignee history
2024–2026Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 11 | 2024–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 11 | 2024–2026 |