Inventor
Min-Chuan Tsai
Inventor
New Taipei, TW
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices41%
H01LSemiconductor devices35%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
PatentTitleYear
10,497,617Conductive structure and method for manufacturing conductive structure201910,199,269Conductive structure and method for manufacturing conductive structure201910,199,228Manufacturing method of metal gate structure201910,192,826Conductive layout structure including high resistive layer201910,068,797Semiconductor process for forming plug20189,985,110Semiconductor process20189,887,158'Conductive structure having an entrenched high resistive layer'20189,755,047'Semiconductor process and semiconductor device'20179,735,015'Fabricating method of semiconductor structure'20179,679,813'Semiconductor structure and process for forming plug including layer with pulled back sidewall part'20179,653,300'Structure of metal gate structure and manufacturing method of the same'20179,640,482'Semiconductor device with a contact plug and method of fabricating the same'20179,570,348'Method of forming contact strucutre'20179,558,996'Method for filling trench with metal layer and semiconductor structure formed by using the same'20179,478,628'Metal gate forming process'20169,281,374'Metal gate structure and fabrication method thereof'20169,166,020'Metal gate structure and manufacturing method thereof'20159,130,032'Semiconductor device'20159,076,784'Transistor and semiconductor structure'20159,018,086'Semiconductor device having a metal gate and fabricating method thereof'20158,975,666'MOS transistor and process thereof'20158,872,286'Metal gate structure and fabrication method thereof'20148,860,135'Semiconductor structure having aluminum layer with high reflectivity'20148,841,733'Semiconductor device and method of fabricating the same'20148,836,049'Semiconductor structure and process thereof'20148,802,524'Method of manufacturing semiconductor device having metal gates'20148,735,269'Method for forming semiconductor structure having TiN layer'20148,691,681'Semiconductor device having a metal gate and fabricating method thereof'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2019Patents assigned to UNITED MICROELECTRONICS CORP (28)· patent assignee history
2014–2015Patents assigned to TSAI MIN-CHUAN (8)· patent assignee history
2014–2015Patents assigned to HUANG HSIN-FU (7)· patent assignee history
2014–2015Patents assigned to HSU CHI-MAO (6)· patent assignee history
2014–2015Patents assigned to LIN CHIN-FU (6)· patent assignee history
2014–2019Based in New Taipei, TW· patent location history
2014Based in Taipei, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 28 | 2014–2019 |
| TSAI MIN-CHUANself | 8 | 2014–2015 |
| HUANG HSIN-FU | 7 | 2014–2015 |
| HSU CHI-MAO | 6 | 2014–2015 |
| LIN CHIN-FU | 6 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| New Taipei, TW | 27 | 2014–2019 |
| Taipei, TW | 1 | 2014 |