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Inventor

Lu-An Chen

Inventor
Hsinchu County, TW

Overview

26→
Patents
2013–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices41%
H01LSemiconductor devices29%
H02HEmergency protective circuit arrangements8%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
H01GCapacitors2%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy2%
H02JElectric power networks2%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%
PatentTitleYear
11,008,412Method of polymerizing an olefin202110,978,898Charging circuit, system and method, and electronic device202110,926,234Catalyst composition with mixed selectivity control agent and method202110,319,521Conductor-insulator-conductor capacitor and method of fabricating the same201910,262,987Electrostatic discharge protection circuit20199,825,021'Semiconductor device for electrostatic discharge protection'20179,692,228'ESD protection control circuit and system'20179,660,072'Laterally diffused metal oxide semiconductor and field drift metal oxide semiconductor'20179,496,251'Electrostatic discharge protector'20169,443,841'Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise'20169,443,927'Semiconductor device'20169,362,420'Transistor structure for electrostatic discharge protection'20169,343,567'Semiconductor device'20169,325,164'Electrostatic discharge (ESD) protection device for an output buffer'20169,263,562'Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise'20169,153,571'Stacked electrostatic discharge (ESD) protection device'20159,142,545'Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise'20159,142,540'Electrostatic discharge protection semiconductor device'20159,041,110'Semiconductor device for electrostatic discharge protection'20158,896,024'Electrostatic discharge protection structure and electrostatic discharge protection circuit'20148,723,263'Electrostatic discharge protection device'20148,716,801'Metal oxide semiconductor device'20148,530,969'Semiconductor device'20138,507,981'Method of manufacturing NMOS transistor with low trigger voltage'20138,492,834'Electrostatic discharge protection device and applications thereof'20138,477,467'Electrostatic discharge protection circuit'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2019Patents assigned to UNITED MICROELECTRONICS CORP (22)· patent assignee history
2013–2014Patents assigned to Chen lu-an (6)· patent assignee history
2013–2014Patents assigned to LAI TAI-HSIANG (6)· patent assignee history
2013–2014Patents assigned to TANG TIEN-HAO (6)· patent assignee history
2013–2015Based in Keelung, TW· patent location history
2014Patents assigned to CHAO MEI-LING (1)· patent assignee history
2014–2019Based in Hsinchu County, TW· patent location history
2019Based in Singapore, SG· patent location history
2021Based in Missouri City, TX, US· patent location history
2021Based in Guangdong, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNITED MICROELECTRONICS CORP222013–2019
Chen lu-anself62013–2014
LAI TAI-HSIANG62013–2014
TANG TIEN-HAO62013–2014
CHAO MEI-LING12014
Locations
LocationPatentsSpan
Hsinchu County, TW122014–2019
Keelung, TW72013–2015
Missouri City, Texas, US22021
Guangdong, CN12021
Singapore, SG12019