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Inventor

J. S. Shiao

Inventor
Hsinchu, TW

Overview

4→
Patents
1995–2002
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices25%
H10DInorganic electric semiconductor devices25%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests25%
C23CCoating metallic material13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
PatentTitleYear
6,440,792'DRAM technology of storage node formation and no conduction/isolation process of bottle-shaped deep trench'20026,214,713'Two step cap nitride deposition for forming gate electrodes'20016,110,812'Method for forming polycide gate'20005,393,686'Method of forming gate oxide by TLC gettering clean'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995Patents assigned to TAIWAN SEMICONDUCTOR MFG (1)· patent assignee history
1995–2002Based in Hsinchu, TW· patent location history
2000–2002Patents assigned to MOSEL VITELIC INC (3)· patent assignee history
2000–2002Patents assigned to SIEMENS AG (3)· patent assignee history
2000Patents assigned to PROMOS TECHNOLOGIES INC (1)· patent assignee history
2001–2002Patents assigned to PROMOS TECHNOLOGY INC (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MOSEL VITELIC INC32000–2002
SIEMENS AG32000–2002
PROMOS TECHNOLOGY INC22001–2002
PROMOS TECHNOLOGIES INC12000
TAIWAN SEMICONDUCTOR MFG11995
Locations
LocationPatentsSpan
Hsinchu, TW41995–2002