Inventor
Toshiaki Chiyo
Inventor
Ama-gun, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers34%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
C30BSingle-crystal growth12%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B65FGathering or removal of domestic or like refuse3%
C23CCoating metallic material3%
H10DInorganic electric semiconductor devices3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
PatentTitleYear
7,312,472'Compound semiconductor element based on Group III element nitride'20077,128,846'Process for producing group III nitride compound semiconductor'20067,029,939'P-type semiconductor manufacturing method and semiconductor device'20066,982,435'Group III nitride compound semiconductor device and method for producing the same'20066,943,128'Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element'20056,939,733'Group III nitride compound semiconductor device and method of producing the same'20056,918,961'Group III nitride compound semiconductor device and producing method therefor'20056,875,629'III group nitride based semiconductor element and method for manufacture thereof'20056,872,965'Group III nitride compound semiconductor device'20056,861,275'Method for producing group III nitride compound semiconductor device'20056,841,808'Group III nitride compound semiconductor device and method for producing the same'20056,830,949'Method for producing group-III nitride compound semiconductor device'20046,713,789'Group III nitride compound semiconductor device and method of producing the same'20046,623,998'Method for manufacturing group III nitride compound semiconductor device'20036,593,016'Group III nitride compound semiconductor device and producing method thereof'20036,589,808'GaN type semiconductor device'20036,531,719'Group III nitride compound semiconductor device'20036,426,512'Group III nitride compound semiconductor device'20026,342,404'Group III nitride compound semiconductor device and method for producing'20026,335,217'GaN type semiconductor device fabrication'20026,100,545'GaN type semiconductor device'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2007Patents assigned to TOYODA GOSEI KK (21)· patent assignee history
2000–2003Based in Inazawa, JP· patent location history
2002–2006Based in Ama-gun, JP· patent location history
2003–2005Based in Nishikasugai-gun, JP· patent location history
2004–2007Based in Aichi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOYODA GOSEI KK | 21 | 2000–2007 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ama-gun, JP | 8 | 2002–2006 |
| Aichi, JP | 7 | 2004–2007 |
| Nishikasugai-gun, JP | 3 | 2003–2005 |
| Inazawa, JP | 3 | 2000–2003 |