Inventor
Ying Hao Hsieh
Inventor
Hsinchu, TW
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices38%
H10DInorganic electric semiconductor devices38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
PatentTitleYear
10,784,375Source/drain recess in a semiconductor device202010,446,665Method and structure for protecting gates during epitaxial growth201910,020,397Bottle-neck recess in a semiconductor device20189,941,388Method and structure for protecting gates during epitaxial growth20189,054,130'Bottle-neck recess in a semiconductor device'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015Patents assigned to CHEN CHAO-CHENG (1)· patent assignee history
2015Patents assigned to HSIEH YING HAO (1)· patent assignee history
2015Patents assigned to JANG SYUN-MING (1)· patent assignee history
2015–2020Based in Hsinchu, TW· patent location history
2018–2019Patents assigned to GLOBALFOUNDRIES INC (2)· patent assignee history
2018–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (2)· patent assignee history
2018–2019Based in Clifton Park, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 2 | 2018–2019 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 2 | 2018–2020 |
| CHEN CHAO-CHENG | 1 | 2015 |
| HSIEH YING HAOself | 1 | 2015 |
| JANG SYUN-MING | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 3 | 2015–2020 |
| Clifton Park, New York, US | 2 | 2018–2019 |