Inventor
HIROAKI HONJO
Inventor
JP
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices23%
H10NElectric solid-state devices not otherwise provided for23%
G11CStatic stores20%
H01LSemiconductor devices14%
H01FMagnets9%
H10DInorganic electric semiconductor devices9%
G01RMeasuring electric variables3%
PatentTitleYear
12,402,537Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element202511,963,458Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory202411,770,981Magnetoresistive element and magnetic memory202311,765,981Magnetoresistance effect element and magnetic memory202311,563,169Magnetic tunnel junction element and magnetic memory202311,462,253Magnetoresistance effect element and magnetic memory202211,264,565Magnetoresistance effect element and magnetic memory202211,258,006Magnetic memory element, method for producing same, and magnetic memory2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to UNIV TOHOKU (8)· patent assignee history
2022–2025Based in JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV TOHOKU | 8 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 8 | 2022–2025 |