Inventor
Derrick S. Kamber
Inventor
Goleta, CA, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
C01BNon-metallic elements8%
H01LSemiconductor devices8%
Y10TTechnical subjects covered by former us classification6%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds5%
C23CCoating metallic material5%
H10DInorganic electric semiconductor devices5%
B01DSeparation3%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
PatentTitleYear
11,047,041Method and system for preparing polycrystalline group III metal nitride202110,619,239Method and system for preparing polycrystalline group III metal nitride202010,604,865Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules202010,400,352Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate201910,145,026Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules2018RE047114Polycrystalline group III metal nitride with getter and method of making201810,094,017Method and system for preparing polycrystalline group III metal nitride201810,036,099Process for large-scale ammonothermal manufacturing of gallium nitride boules201810,029,955Capsule for high pressure, high temperature processing of materials and methods of use20189,650,723'Large area seed crystal for ammonothermal crystal growth and method of making'20179,589,792'High quality group-III metal nitride crystals, methods of making, and methods of use'20179,564,320'Large area nitride crystal and method for making it'20178,987,156'Polycrystalline group III metal nitride with getter and method of making'20158,729,559'Method of making bulk InGaN substrates and devices thereon'20148,647,967'Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same'20148,641,823'Reactor designs for use in ammonothermal growth of group-III nitride crystals'20148,574,525'Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals'20138,465,588'Ammonothermal method for growth of bulk gallium nitride'20138,048,225'Large-area bulk gallium nitride wafer and method of manufacture'20117,976,630'Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2019Patents assigned to SORAA INC (9)· patent assignee history
2011–2020Based in Goleta, CA, US· patent location history
2013–2014Patents assigned to KAMBER DERRICK S (4)· patent assignee history
2013–2014Patents assigned to SPECK JAMES S (4)· patent assignee history
2013–2014Patents assigned to NAKAMURA SHUJI (3)· patent assignee history
2017–2019Based in Fremont, CA, US· patent location history
2018–2021Patents assigned to SLT TECH INC (8)· patent assignee history
2018Based in Santa Barbara, CA, US· patent location history
2021Based in Camas, WA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SORAA INC | 9 | 2011–2019 |
| SLT TECH INC | 8 | 2018–2021 |
| KAMBER DERRICK Sself | 4 | 2013–2014 |
| SPECK JAMES S | 4 | 2013–2014 |
| NAKAMURA SHUJI | 3 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Goleta, California, US | 16 | 2011–2020 |
| Fremont, California, US | 2 | 2017–2019 |
| Camas, Washington, US | 1 | 2021 |
| Santa Barbara, California, US | 1 | 2018 |