LexDanaLexDanabeta
Inventor

Seongjun Park

Inventor
Seoul, KR

Overview

61→
Patents
2015–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 61 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
C09DCoating compositions, e.g. paints, varnishes or lacquers3%
C01BNon-metallic elements2%
H10HInorganic light-emitting semiconductor devices having potential barriers2%
PatentTitleYear
10,853,921Method and apparatus for image sharpening using edge-preserving filters202010,840,338Semiconductor device including graphene and method of manufacturing the semiconductor device202010,811,604Nonvolatile memory apparatus including resistive-change material layer202010,790,356Semiconductor device including metal-2 dimensional material-semiconductor contact202010,790,230Layer structure including diffusion barrier layer and method of manufacturing the same202010,777,412Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition202010,727,182Layer structure including diffusion barrier layer and method of manufacturing the same202010,680,066Graphene device, methods of manufacturing and operating the same, and electronic apparatus including the graphene device202010,559,660Semiconductor device including metal-2 dimensional material-semiconductor contact202010,551,735Pellicle composition for photomask, pellicle for photomask formed from the pellicle composition, method of forming the pellicle, reticle including the pellicle, and exposure apparatus for lithography including the reticle202010,553,730Broadband multi-purpose optical device and methods of manufacturing and operating the same202010,553,684Optical sensor and image sensor including graphene quantum dots202010,539,868Pellicle for photomask, reticle including the same, and exposure apparatus for lithography202010,529,877Semiconductor devices including two-dimensional materials and methods of manufacturing the semiconductor devices202010,522,664Electronic device including a tunnel layer201910,495,972Hardmask composition and method of forming pattern using the hardmask composition201910,490,823Electrode material, secondary battery including the same, and manufacturing methods thereof201910,331,033Hardmask composition and method of forming pattern using the hardmask composition201910,269,975Electronic device including 2-dimensional material201910,229,881Layer structure including diffusion barrier layer and method of manufacturing the same201910,217,513Phase change memory devices including two-dimensional material and methods of operating the same201910,217,819Semiconductor device including metal-2 dimensional material-semiconductor contact201910,199,469Semiconductor device including metal-semiconductor junction201910,199,958Triboelectric generator201910,186,545Image sensor including visible and near-infrared light detectors and method of manufacturing the same201910,170,325Hardmask composition and method of forming pattern by using the hardmask composition201910,153,163Hardmask composition and method of forming patterning by using the hardmask composition201810,138,543Method of analyzing growth of two-dimensional material201810,134,676Flexible device having flexible interconnect layer using two-dimensional materials201810,133,176Hardmask composition and method of forming pattern using the same201810,134,628Multilayer structure including diffusion barrier layer and device including the multilayer structure201810,128,490Anode layer, lithium secondary battery including anode layer, and method of manufacturing anode layer201810,121,854Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic device201810,096,735Photodetector using bandgap-engineered 2D materials and method of manufacturing the same201810,090,479Stretchable/foldable optoelectronic device, method of manufacturing the same, and apparatus including the stretchable/foldable optoelectronic device201810,079,144Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer201810,074,737Flexible device including two-dimensional material and method of manufacturing the same201810,014,799Triboelectric generator20189,997,604Electrode connecting structure including adhesion layer and electronic device including the same20189,989,853Hardmask composition and method of forming pattern using the hardmask composition20189,960,309Photoelectronic device including charge barrier20189,954,155Thermoelectric structure, thermoelectric device and method of manufacturing the same20189,935,184Electronic device including a tunneling layer20189,929,238'Graphene-containing device having graphene nanopatterns separated by narrow dead zone distance'20189,905,422'Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard mask'20189,887,303'Semiconductor device including two-dimensional material, and method of manufacturing the semiconductor device'20189,882,074'Optoelectronic device'20189,806,218'Photodetector using bandgap-engineered 2D materials and method of manufacturing the same'20179,761,532'Hybrid interconnect structure and electronic device employing the same'20179,755,092'Optical device including two-dimensional material and method of manufacturing the same'20179,748,108'Method of forming graphene nanopattern by using mask formed from block copolymer'20179,735,233'Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic device'20179,721,943'Wiring structure and electronic device including the same'20179,721,794'Hardmask composition and method of forming patterning by using the hardmask composition'20179,691,853'Electronic device including graphene and quantum dots'20179,595,580'Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element'20179,583,639'Nonvolatile memory device using two-dimensional material and method of manufacturing the same'20179,583,358'Hardmask composition and method of forming pattern by using the hardmask composition'20179,577,057'Semiconductor device contacts'20179,337,149'Semiconductor devices and methods of fabricating the same'20169,166,004'Semiconductor device contacts'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2017Patents assigned to INTEL CORP (2)· patent assignee history
2015Patents assigned to GHANI TAHIR (1)· patent assignee history
2015Patents assigned to HAVERTY MICHAEL G (1)· patent assignee history
2015–2020Based in San Jose, CA, US· patent location history
2016–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (58)· patent assignee history
2016–2020Based in Seoul, KR· patent location history
2018–2020Patents assigned to RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD582016–2020
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV42018–2020
INTEL CORP22015–2017
GHANI TAHIR12015
HAVERTY MICHAEL G12015
Locations
LocationPatentsSpan
Seoul, KR582016–2020
San Jose, California, US32015–2020