Inventor

Jacques I. Pankove

Inventor

Boulder, CO, US

Overview

38→

Patents

1976–2005

Patent span

Electricity

Primary field (CPC H)

Patents· 38 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

Y10Sprimary

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation13%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light10%

H10HInorganic light-emitting semiconductor devices having potential barriers9%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

H10DInorganic electric semiconductor devices7%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%

B82YSpecific uses or applications of nanostructures3%

C30BSingle-crystal growth3%

PatentTitleYear

6,893,932'Heterojunction bipolar transistor containing at least one silicon carbide layer'2005 6,870,204'Heterojunction bipolar transistor containing at least one silicon carbide layer'2005 6,527,857'Method and apparatus for growing a gallium nitride boule'2003 6,263,006'Electroluminescent solid state device'2001 6,169,330'Method and apparatus for packaging high temperature solid state electronic devices'2001 6,067,308'Electroluminescent solid state device'2000 5,930,666'Method and apparatus for packaging high temperature solid state electronic devices'1999 5,703,896'Silicon quantum dot laser'1997 5,559,822'Silicon quantum dot laser'1996 5,378,902'Optoelectronic maximum identifier for detecting the physical location of a maximum intensity optical signal in a winner-take-all network'1995 5,263,041'Surface emitting semiconductor laser'1993 5,146,314'Apparatus for semiconductor circuit chip cooling using a diamond layer'1992 5,136,353'Optical switch'1992 5,070,040'Method and apparatus for semiconductor circuit chip cooling'1991 4,985,742'High temperature semiconductor devices having at least one gallium nitride layer'1991 4,979,002'Optical photodiode switch array with zener diode'1990 4,977,433'Optoelectronic semiconductor device'1990 4,862,471'Semiconductor light emitting device'1989 4,803,528'Insulating film having electrically conducting portions'1989 4,742,384'Structure for passivating a PN junction'1988 4,684,964'Silicon light emitting device and a method of making the device'1987 4,584,028'Neutralization of acceptor levels in silicon by atomic hydrogen'1986 4,551,352'Method of making P-type hydrogenated amorphous silicon'1985 4,473,597'Method and structure for passivating a PN junction'1984 4,392,011'Solar cell structure incorporating a novel single crystal silicon material'1983 4,339,285'Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation'1982 4,322,253'Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment'1982 4,254,426'Method and structure for passivating semiconductor material'1981 4,224,084'Method and structure for passivating a semiconductor device'1980 4,139,858'Solar cell with a gallium nitride electrode'1979 4,114,095'Solid state oscilloscope'1978 4,113,514'Method of passivating a semiconductor device by treatment with atomic hydrogen'1978 4,109,271'Amorphous silicon-amorphous silicon carbide photovoltaic device'1978 4,074,139'Apparatus and method for maskless ion implantation'1978 4,069,492'Electroluminescent semiconductor device having a body of amorphous silicon'1978 4,028,720'Photovoltaic device'1977 3,991,339'Light emitting diode with reflector'1976 3,986,065'Insulating nitride compounds as electron emitters'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1988Patents assigned to RCA CORP (19)· patent assignee history

1976–1989Based in Princeton, NJ, US· patent location history

1987–2005Based in Boulder, CO, US· patent location history

1989–1993Patents assigned to UNIV COLORADO FOUNDATION (8)· patent assignee history

1995–1997Patents assigned to UNIV COLORADO (3)· patent assignee history

1999–2005Patents assigned to ASTRALUX INC (6)· patent assignee history

2001Patents assigned to ASTRULUX INC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
RCA CORP	19	1976–1988
UNIV COLORADO FOUNDATION	8	1989–1993
ASTRALUX INC	6	1999–2005
UNIV COLORADO	3	1995–1997
ASTRULUX INC	1	2001

Locations

Location	Patents	Span
Boulder, CO, US	19	1987–2005
Princeton, New Jersey, US	19	1976–1989