Inventor

Bharat Krishnan

Inventor
Mechanicville, NY, US

Overview

18→
Patents
2014–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
PatentTitleYear
11,094,598Multiple threshold voltage devices202110,886,178Device with highly active acceptor doping and method of production thereof202110,811,411Fin-type field effect transistor with reduced fin bulge and method202010,312,150Protected trench isolation for fin-type field-effect transistors201910,211,045Microwave annealing of flowable oxides with trap layers201910,134,876FinFETs with strained channels and reduced on state resistance201810,121,706Semiconductor structure including two-dimensional and three-dimensional bonding materials201810,062,692Field effect transistors with reduced parasitic resistances and method201810,056,458Siloxane and organic-based MOL contact patterning20189,882,052'Forming defect-free relaxed SiGe fins'20189,640,423'Integrated circuits and methods for their fabrication'20179,559,166'Fabricating transistors having resurfaced source/drain regions with stressed portions'20179,472,465'Methods of fabricating integrated circuits'20169,287,180'Integrated circuits having finFETs with improved doped channel regions and methods for fabricating same'20169,165,767'Semiconductor structure with increased space and volume between shaped epitaxial structures'20159,093,476'Integrated circuits having FinFETs with improved doped channel regions and methods for fabricating same'20159,059,218'Reducing gate expansion after source and drain implant in gate last process'20158,912,085'Method and apparatus for adjusting threshold voltage in a replacement metal gate integration'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2021Patents assigned to GLOBALFOUNDRIES INC (17)· patent assignee history
2014–2018Based in Clifton Park, NY, US· patent location history
2015–2021Based in Mechanicville, NY, US· patent location history
2021Patents assigned to GLOBALFOUNDRIES US INC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
GLOBALFOUNDRIES INC172014–2021
GLOBALFOUNDRIES US INC12021
Locations
LocationPatentsSpan
Mechanicville, New York, US122015–2021
Clifton Park, New York, US62014–2018