Inventor
Naoki Yutani
Inventor
Tokyo, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H04NPictorial communication, e.g. television4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
C23CCoating metallic material2%
C30BSingle-crystal growth2%
PatentTitleYear
10,276,711Semiconductor device and method of manufacturing the same20199,685,566'Method of manufacturing silicon carbide semiconductor device'20179,502,553'Semiconductor device and method for manufacturing the same'20169,362,391'Silicon carbide semiconductor device and method of manufacturing the same'20169,184,307'Silicon carbide semiconductor device'20159,105,715'Semiconductor device and method for manufacturing the same'20159,059,193'Epitaxial wafer and semiconductor element'20158,963,276'Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells'20158,587,072'Silicon carbide semiconductor device'20138,569,123'Method for manufacturing silicon carbide semiconductor device'20138,377,811'Method for manufacturing silicon carbide semiconductor device'20138,304,901'Semiconductor device having a groove and a junction termination extension layer surrounding a guard ring layer'20128,178,972'Semiconductor device and manufacturing method therefor'20127,880,763'Semiconductor device and manufacturing method therefor'20116,619,130'Pressure sensor'20036,591,683'Pressure sensor'20036,393,919'Pressure sensor with a thermal pressure detecting element'20026,207,067'Method for fabricating oxide superconducting device'20015,444,484'Solid-state imaging device'19955,060,038'Charge sweep solid-state image sensor'19915,040,038'Solid-state image sensor'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2019Patents assigned to MITSUBISHI ELECTRIC CORP (21)· patent assignee history
1991–1995Based in Itami, JP· patent location history
1991Based in Hyogo, JP· patent location history
2001–2019Based in Tokyo, JP· patent location history
2011–2012Based in Chiyoda-ku, JP· patent location history
2012–2017Patents assigned to YUTANI NAOKI (10)· patent assignee history
2012–2015Patents assigned to OHTSUKA KENICHI (6)· patent assignee history
2012–2015Patents assigned to KURODA KENICHI (4)· patent assignee history
2012–2015Patents assigned to WATANABE HIROSHI (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 21 | 1991–2019 |
| YUTANI NAOKIself | 10 | 2012–2017 |
| OHTSUKA KENICHI | 6 | 2012–2015 |
| KURODA KENICHI | 4 | 2012–2015 |
| WATANABE HIROSHI | 4 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 16 | 2001–2019 |
| Chiyoda-ku, JP | 2 | 2011–2012 |
| Itami, JP | 2 | 1991–1995 |
| Hyogo, JP | 1 | 1991 |