Inventor
Tomoya Saito
Inventor
Beacon, NY, US
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores27%
H10BElectronic memory devices27%
H10DInorganic electric semiconductor devices20%
H01LSemiconductor devices7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
B60QArrangement of signalling or lighting devices, the mounting or supporting thereof or circuits therefor, for vehicles in general2%
G06FElectric digital data processing2%
H05BElectric heating2%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
11,133,326Semiconductor device and method of manufacturing thereof202111,083,066Multiple-output load driving device202110,796,768Semiconductor memory device202010,656,401Optical apparatus, measuring apparatus, measuring method, screening apparatus, and screening method202010,559,581Semiconductor device202010,395,742Semiconductor device201910,333,024Ground fault detection for light-emitting element drive device201910,249,638Semiconductor device201910,224,083Semiconductor device, and unique ID generation method201910,031,792Flash memory20189,514,946'Semiconductor memory incorporating insulating layers of progressively decreasing band gaps and method of manufacturing the same'20168,174,885'High speed operation method for twin MONOS metal bit array'20127,936,604'High speed operation method for twin MONOS metal bit array'20117,411,247'Twin insulator charge storage device operation and its fabrication method'20087,394,703'Twin insulator charge storage device operation and its fabrication method'20087,391,653'Twin insulator charge storage device operation and its fabrication method'20087,382,659'Twin insulator charge storage device operation and its fabrication method'20087,382,662'Twin insulator charge storage device operation and its fabrication method'20087,359,250'Twin insulator charge storage device operation and its fabrication method'20087,190,603'Nonvolatile memory array organization and usage'20077,170,132'Twin insulator charge storage device operation and its fabrication method'20077,118,961'Stitch and select implementation in twin MONOS array'20067,046,556'Twin insulator charge storage device operation and its fabrication method'20067,006,378'Array architecture and operation methods for a nonvolatile memory'20066,998,658'Twin NAND device structure, array operations and fabrication method'20066,900,098'Twin insulator charge storage device operation and its fabrication method'20056,838,344'Simplified twin monos fabrication method with three extra masks to standard CMOS'20056,825,084'Twin NAND device structure, array operations and fabrication method'20046,759,290'Stitch and select implementation in twin MONOS array'20046,756,271'Simplified twin monos fabrication method with three extra masks to standard CMOS'20046,707,079'Twin MONOS cell fabrication method and array organization'20046,670,240'Twin NAND device structure, array operations and fabrication method'20036,631,088'Twin MONOS array metal bit organization and single cell operation'20036,531,350'Twin MONOS cell fabrication method and array organization'20036,477,088'Usage of word voltage assistance in twin MONOS cell during program and erase'20026,418,062'Erasing methods by hot hole injection to carrier trap sites of a nonvolatile memory'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2003Patents assigned to HALO INC (2)· patent assignee history
2002–2021Based in Tokyo, JP· patent location history
2003–2012Patents assigned to HALO LSI INC (22)· patent assignee history
2003–2008Based in Beacon, NY, US· patent location history
2003–2006Based in Poughkeepsie, NY, US· patent location history
2007–2012Based in Beaverton, OR, US· patent location history
2012Patents assigned to BABA YOSHITAKA (1)· patent assignee history
2016–2021Patents assigned to RENESAS ELECTRONICS CORP (8)· patent assignee history
2019–2021Patents assigned to ROHM CO LTD (2)· patent assignee history
2021Based in Kyoto-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HALO LSI INC | 22 | 2003–2012 |
| RENESAS ELECTRONICS CORP | 8 | 2016–2021 |
| HALO INC | 2 | 2002–2003 |
| ROHM CO LTD | 2 | 2019–2021 |
| BABA YOSHITAKA | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Beacon, New York, US | 15 | 2003–2008 |
| Tokyo, JP | 8 | 2002–2021 |
| Poughkeepsie, New York, US | 5 | 2003–2006 |
| Beaverton, OR, US | 3 | 2007–2012 |
| Kyoto-shi, JP | 1 | 2021 |