Inventor

Khanh Nguyen

Inventor
Fremont, CA, US

Overview

20→
Patents
1992–2020
Patent span
Physics
Primary field (CPC G)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores49%
H10BElectronic memory devices20%
H01LSemiconductor devices14%
G06FElectric digital data processing3%
G07FCoin-freed or like apparatus3%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
H01JElectric discharge tubes or discharge lamps3%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
10,614,894Select gates separation for improving performance in three-dimensional non-volatile memory20209,947,407Techniques for programming of select gates in NAND memory20189,659,656'Techniques for programming of select gates in NAND memory'20179,653,175'Determination of word line to word line shorts between adjacent blocks'20179,514,835'Determination of word line to word line shorts between adjacent blocks'20169,490,020'Time domain ramp rate control for erase inhibit in flash memory'20169,449,694'Non-volatile memory with multi-word line select for defect detection operations'20169,361,990'Time domain ramp rate control for erase inhibit in flash memory'20169,349,458'Biasing of unselected blocks of non-volatile memory to reduce loading'20169,349,468'Operational amplifier methods for charging of sense amplifier internal nodes'20169,318,210'Word line kick during sensing: trimming and adjacent word lines'20169,305,648'Techniques for programming of select gates in NAND memory'20169,236,128'Voltage kick to non-selected word line during programming'20168,107,298'Non-volatile memory with fast binary programming and reduced power consumption'20127,095,654'Method and system for programming and inhibiting multi-level, non-volatile memory cells'20067,047,338'Configurable hot-swap communication'20066,967,872'Method and system for programming and inhibiting multi-level, non-volatile memory cells'20056,944,068'Method and system for programming and inhibiting multi-level, non-volatile memory cells'20056,839,055'Video data error detection'20055,142,250'High power microwave generator'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2006Patents assigned to SANDISK CORP (3)· patent assignee history
2005Patents assigned to DELL PRODUCTS LP (1)· patent assignee history
2005–2012Based in Sunnyvale, CA, US· patent location history
2006Patents assigned to IGT RENO NEV (1)· patent assignee history
2006Based in Carson City, NV, US· patent location history
2012–2016Patents assigned to SANDISK TECHNOLOGIES INC (8)· patent assignee history
2016–2020Patents assigned to SANDISK TECHNOLOGIES LLC (7)· patent assignee history
2016–2018Based in Fremont, CA, US· patent location history
2016Based in Milpitas, CA, US· patent location history
2020Based in San Ramon, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SANDISK TECHNOLOGIES INC82012–2016
SANDISK TECHNOLOGIES LLC72016–2020
SANDISK CORP32005–2006
DELL PRODUCTS LP12005
IGT RENO NEV12006
Locations
LocationPatentsSpan
Fremont, California, US112016–2018
Sunnyvale, California, US42005–2012
San Ramon, California, US12020
Milpitas, California, US12016
Carson City, NV, US12006