Inventor

Alan Xuguang Wang

Inventor
Eden Prairie, MN, US

Overview

21→
Patents
1992–2020
Patent span
Physics
Primary field (CPC G)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores33%
G01RMeasuring electric variables7%
H10BElectronic memory devices7%
H10NElectric solid-state devices not otherwise provided for7%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry5%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
G02BOptical elements, systems or apparatus5%
B01DSeparation2%
B65DContainers for storage or transport of articles or materials, e.g. bags, barrels, bottles, boxes, cans, cartons, crates, drums, jars, tanks, hoppers, forwarding containers2%
F21KNon-electric light sources using luminescence2%
PatentTitleYear
10,754,236Illumination system with high intensity projection mechanism and method of operation thereof202010,732,441Nano-cavity modulator device and method of manufacture and use202010,274,421Sensor devices comprising a metal-organic framework material and methods of making and using the same20199,983,124Sensor devices comprising a metal-organic framework material and methods of making and using the same20189,831,954Increasing data bandwidth to wireless devices20178,966,181'Memory hierarchy with non-volatile filter and victim caches'20158,553,454'Predictive thermal preconditioning and timing control for non-volatile memory cells'20138,526,252'Quiescent testing of non-volatile memory array'20138,391,055'Magnetic tunnel junction and memristor apparatus'20138,320,169'Asymmetric write current compensation'20128,154,914'Predictive thermal preconditioning and timing control for non-volatile memory cells'20128,107,282'Asymmetric write current compensation'20128,059,453'Magnetic tunnel junction and memristor apparatus'20118,054,678'Stuck-at defect condition repair for a non-volatile memory cell'20118,004,875'Current magnitude compensation for memory cells in a data storage array'20117,916,515'Non-volatile memory read/write verify'20117,916,528'Predictive thermal preconditioning and timing control for non-volatile memory cells'20117,898,844'Magnetic tunnel junction and memristor apparatus'20117,894,250'Stuck-at defect condition repair for a non-volatile memory cell'20117,881,096'Asymmetric write current compensation'20115,137,208'Tamper evident package'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992Based in Hoffman Estates, IL, US· patent location history
2011–2015Patents assigned to SEAGATE TECHNOLOGY LLC (15)· patent assignee history
2011–2015Patents assigned to CHEN YIRAN (8)· patent assignee history
2011–2015Patents assigned to LI HAI (6)· patent assignee history
2011–2013Patents assigned to WANG XIAOBIN (6)· patent assignee history
2011–2015Based in Eden Prairie, MN, US· patent location history
2012–2015Patents assigned to WANG ALAN XUGUANG (6)· patent assignee history
2017–2020Based in Corvallis, OR, US· patent location history
2020Based in Taichung, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEAGATE TECHNOLOGY LLC152011–2015
CHEN YIRAN82011–2015
LI HAI62011–2015
WANG ALAN XUGUANGself62012–2015
WANG XIAOBIN62011–2013
Locations
LocationPatentsSpan
Eden Prairie, Minnesota, US152011–2015
Corvallis, OR, US42017–2020
Taichung, TW12020
Hoffman Estates, Illinois, US11992