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Inventor

Naohito Yamada

Inventor
Nagoya, JP

Overview

42→
Patents
1990–2020
Patent span
General tagging of new technological developments
Primary field (CPC Y)

Patents· 42 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Mprimary
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy17%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution17%
C04BLime, magnesia14%
Y10TTechnical subjects covered by former us classification11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
Y02PClimate change mitigation technologies in the production or processing of goods10%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds4%
C01FCompounds of the metals beryllium, magnesium, aluminium, calcium, strontium, barium, radium, thorium, or of the rare-earth metals3%
C01BNon-metallic elements2%
C23CCoating metallic material2%
PatentTitleYear
10,734,685Nickel-zinc battery202010,700,385Battery using layered double hydroxide202010,686,177Electrode cartridge and zinc secondary cell using same202010,601,094Separator-equipped air electrode for air-metal battery202010,522,868Battery and assembly method therefor201910,483,596Secondary battery with hydroxide-ion-conducting ceramic separator201910,446,821Secondary battery using hydroxide ion-conductive ceramic separator201910,381,689Nickel-zinc battery201910,370,250Layered double hydroxide film and composite material containing layered double hydroxide201910,297,869Nickel-zinc battery201910,290,847Separator structure body for use in zinc secondary battery201910,276,896Nickel-zinc battery201910,263,292Nickel-zinc Battery201910,128,542Nickel-zinc battery201810,020,480Layered-double-hydroxide-containing composite material and method for producing same20189,793,529'Layered-double-hydroxide-oriented film and method for producing same'20179,391,349'Lithium air secondary battery'20169,293,791'Zinc secondary battery'20169,070,953'Zinc-air secondary battery having inorganic solid electrolyte body'20158,231,985'Aluminum-nitride-based composite material, method for manufacturing the same, and member for a semiconductor manufacturing apparatus'20128,226,865'Aluminum-nitride-based composite material, method for manufacturing the same, and member for a semiconductor manufacturing apparatus'20127,629,282'Aluminum nitride sintered body, semiconductor manufacturing device and method of manufacturing'20097,605,102'Aluminum nitride ceramic and semiconductor manufacturing member'20097,592,280'Aluminum nitride sintered body, method of manufacturing aluminum nitride sintered body, and member'20097,422,992'Aluminum nitride sintered body, semiconductor manufacturing member, and method of manufacturing aluminum nitride sintered body'20087,332,027'Method for manufacturing aluminum nitride single crystal'20087,288,496'Aluminum nitride sintered body and method of evaluation for the same'20077,250,215'Aluminum nitride sintered body containing carbon fibers and method of manufacturing the same'20077,229,940'Dense cordierite based sintered body and method of manufacturing the same'20077,211,216'Aluminum nitride ceramic, semiconductor manufacturing member, and manufacturing method for aluminum nitride ceramic'20077,122,490'Aluminum nitride materials and members for use in the production of semiconductors'20067,042,697'Electrostatic chucks and electrostatically attracting structures'20066,491,571'Substrate for use in wafer attracting apparatus and manufacturing method thereof'20026,471,779'Gas feed ceramic structure for semiconductor-producing apparatus'20026,432,208'Plasma processing apparatus'20026,292,346'Equipment for holding a semiconductor wafer, a method for manufacturing the same, and a method for using the same'20016,174,583'Aluminum nitride sintered body, metal including member, electrostatic chuck, method of producing aluminum nitride sintered body, and method of producing metal including member'20016,166,432'Substrate for use in wafer attracting apparatus and manufacturing method thereof'20006,134,096'Electrostatic chuck'20005,998,320'Aluminum nitride sintered body, metal including member, electrostatic chuck, method of producing aluminum nitride sintered body, and method of producing metal including member'19995,946,183'Electrostatic chuck'19994,959,258'Joined metal-ceramic assembly method of preparing the same'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2020Patents assigned to NGK INSULATORS LTD (42)· patent assignee history
1990–2020Based in Nagoya, JP· patent location history
1999–2012Based in Kasugai, JP· patent location history
2007Based in Kasugaii, JP· patent location history
2012Patents assigned to GOTO AKIRA (2)· patent assignee history
2012Patents assigned to KATSUDA YUJI (2)· patent assignee history
2012Patents assigned to KOBAYASHI YOSHIMASA (2)· patent assignee history
2012Patents assigned to YAMADA NAOHITO (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NGK INSULATORS LTD421990–2020
GOTO AKIRA22012
KATSUDA YUJI22012
KOBAYASHI YOSHIMASA22012
YAMADA NAOHITOself22012
Locations
LocationPatentsSpan
Nagoya, JP231990–2020
Kasugai, JP181999–2012
Kasugaii, JP12007