Inventor
Canfeng Lai
Inventor
Fremont, CA, US
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps39%
C23CCoating metallic material20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
C30BSingle-crystal growth5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B08BCleaning in general2%
H01LSemiconductor devices2%
H02NElectric machines not otherwise provided for2%
H05HPlasma technique2%
PatentTitleYear
10,699,878Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring202010,529,541Inductive plasma source with metallic shower head using B-field concentrator20209,048,190'Methods and apparatus for processing substrates using an ion shield'20158,317,970'Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma'20128,003,500'Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking'20117,789,993'Internal balanced coil for inductively coupled high density plasma processing chamber'20107,659,184'Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking'20107,651,587'Two-piece dome with separate RF coils for inductively coupled plasma reactors'20107,588,036'Chamber clean method using remote and in situ plasma cleaning systems'20097,571,698'Low-frequency bias power in HDP-CVD processes'20097,572,647'Internal balanced coil for inductively coupled high density plasma processing chamber'20097,399,707'In situ application of etch back for improved deposition into high-aspect-ratio features'20087,363,876'Multi-core transformer plasma source'20086,894,474'Non-intrusive plasma probe'20056,869,880'In situ application of etch back for improved deposition into high-aspect-ratio features'20056,863,019'Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas'20056,841,006'Atmospheric substrate processing apparatus for depositing multiple layers on a substrate'20056,755,150'Multi-core transformer plasma source'20046,712,020'Toroidal plasma source for plasma processing'20046,682,603'Substrate support with extended radio frequency electrode upper surface'20046,450,117'Directing a flow of gas in a substrate processing chamber'20026,447,651'High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers'20026,418,874'Toroidal plasma source for plasma processing'20026,364,958'Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges'20025,835,335'Unbalanced bipolar electrostatic chuck power supplies and methods thereof'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2020Patents assigned to LAM RES CORP (2)· patent assignee history
1998–2020Based in Fremont, CA, US· patent location history
2002–2020Patents assigned to APPLIED MATERIALS INC (23)· patent assignee history
2012Patents assigned to FOAD MAJEED A (1)· patent assignee history
2012Patents assigned to LAI CANFENG (1)· patent assignee history
2012Patents assigned to PANG LILY L (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 23 | 2002–2020 |
| LAM RES CORP | 2 | 1998–2020 |
| FOAD MAJEED A | 1 | 2012 |
| LAI CANFENGself | 1 | 2012 |
| PANG LILY L | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fremont, California, US | 25 | 1998–2020 |