LexDanaLexDanabeta
Inventor

Masahiro Kiyotoshi

Inventor
Sagamihara, JP

Overview

64→
Patents
1997–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 64 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices24%
H10DInorganic electric semiconductor devices23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H01LSemiconductor devices10%
H10NElectric solid-state devices not otherwise provided for7%
C23CCoating metallic material2%
B82YSpecific uses or applications of nanostructures2%
G11CStatic stores2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
11,101,325Semiconductor memory and method of manufacturing the same202110,056,433Semiconductor memory and method of manufacturing the same201810,008,509Non-volatile semiconductor memory device20189,768,380'Nonvolatile semiconductor memory device and method of manufacturing the same'20179,711,518'Non-volatile semiconductor memory device'20179,450,181'Semiconductor memory and method of manufacturing the same'20169,373,631'Nonvolatile semiconductor memory device'20169,305,936'Nonvolatile semiconductor memory device and method of manufacturing the same'20169,293,470'Non-volatile semiconductor memory device'20169,230,975'Nonvolatile semiconductor memory device'20169,190,262'Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device'20159,177,809'Nonvolatile semiconductor memory device and method of manufacturing the same'2015RE045732'Nonvolatile semiconductor storage device and method for manufacturing same'20159,117,848'Nonvolatile semiconductor memory device and method of manufacturing the same'20159,087,715'Nonvolatile semiconductor memory device and method of manufacturing the same'20159,076,722'Nonvolatile semiconductor memory device'20158,952,441'Nonvolatile semiconductor memory device and method of manufacturing the same'20158,779,499'Nonvolatile semiconductor memory device and method of manufacturing the same'20148,779,502'Nonvolatile semiconductor memory'20148,766,373'Semiconductor memory and method of manufacturing the same'20148,748,965'Nonvolatile semiconductor memory device'20148,710,580'Semiconductor device and method of manufacturing the same'20148,581,330'Semiconductor memory device and method for manufacturing the same'20138,569,829'Nonvolatile semiconductor memory device'20138,558,208'Resistance random access memory including variable-resistance layers'20138,557,705'Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device'20138,435,857'Method for manufacturing semiconductor memory device'20138,178,875'Nonvolatile memory device and method for manufacturing same'20128,143,146'Method for manufacturing a nonvolatile storage device'20128,124,514'Nonvolatile semiconductor storage device and method for manufacturing same'20128,119,020'Method for manufacturing electronic device'20128,119,196'Semiconductor manufacturing apparatus, liquid container, and semiconductor device manufacturing method'20128,114,755'Method of manufacturing semiconductor device'20128,017,989'Nonvolatile semiconductor memory device and method of manufacturing the same'20118,013,317'Nonvolatile storage device and method for manufacturing same'20118,008,732'Semiconductor memory and method of manufacturing the same'20117,915,156'Semiconductor memory device and method for manufacturing the same'20117,884,413'Semiconductor device'20117,855,116'Nonvolatile semiconductor memory device and manufacturing method thereof'20107,851,849'Nonvolatile semiconductor storage device and method for manufacturing same'20107,682,927'Method of manufacturing semiconductor device'20107,618,876'Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating step'20097,598,151'Semiconductor device fabrication method'20097,538,047'Method of manufacturing semiconductor device'20097,514,338'Method of manufacturing a semiconductor device'20097,416,987'Semiconductor device and method of fabricating the same'20087,416,955'Method of manufacturing a semiconductor device'20087,413,987'Method for manufacturing a semiconductor device'20087,407,864'Polysilazane perhydride solution and method of manufacturing a semiconductor device using the same'20087,312,118'Semiconductor device and method of manufacturing the same'20077,238,587'Semiconductor device fabrication method'20077,202,126'Semiconductor device and method of manufacturing same'20077,187,026'Semiconductor device and method of manufacturing the same'20077,105,397'Semiconductor device and method of fabricating the same'20067,071,107'Method for manufacturing a semiconductor device'20066,982,472'Semiconductor device and capacitor'20066,891,218'Semiconductor device and method of manufacturing same'20056,599,794'Method of manufacturing a semiconductor device and semiconductor device'20036,495,054'Etching method and cleaning method of chemical vapor growth apparatus'20026,326,316'Method of manufacturing semiconductor devices'20016,159,868'Method of forming a high quality layer of BST'20006,091,099'Semiconductor device with tantalum and ruthenium'20005,686,151'Method of forming a metal oxide film'19975,618,761'Method of manufacturing a perovskite thin film dielectric'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2017Patents assigned to TOSHIBA KK (59)· patent assignee history
1997–2021Based in Sagamihara, JP· patent location history
1997Based in Matsudo, JP· patent location history
2006–2012Based in Kanagawa, JP· patent location history
2010–2018Based in Yokkaichi, JP· patent location history
2010–2015Based in Mie, JP· patent location history
2012–2015Patents assigned to KIYOTOSHI MASAHIRO (18)· patent assignee history
2014–2015Patents assigned to SAKUMA KIWAMU (4)· patent assignee history
2014–2015Patents assigned to KUSAI HARUKA (3)· patent assignee history
2018–2021Patents assigned to TOSHIBA MEMORY CORP (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK591997–2017
KIYOTOSHI MASAHIROself182012–2015
SAKUMA KIWAMU42014–2015
KUSAI HARUKA32014–2015
TOSHIBA MEMORY CORP32018–2021
Locations
LocationPatentsSpan
Sagamihara, JP301997–2021
Yokkaichi, JP162010–2018
Mie, JP142010–2015
Kanagawa, JP32006–2012
Matsudo, JP11997