Inventor
Jian Xun Li
Inventor
Singapore, SG
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices22%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
A24FSmokers' requisites4%
H10BElectronic memory devices4%
A61MDevices for introducing media into, or onto, the body2%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
B05BSpraying apparatus2%
B22FWorking metallic powder2%
PatentTitleYear
10,933,404Preparation and application of silver-modified spiral titanium dioxide nano-fiber photocatalyst202110,920,025Polyolefin resin powder suitable for selective laser sintering and its preparation method20219,861,129'Preparation method of porous ceramic, porous ceramic, and electronic cigarette'20189,648,909'Porous ceramic material, manufacturing method and use thereof'20179,328,425'Device and process for continuously cleaning surface of molybdenum wire at high temperature'20167,238,971'Self-aligned lateral heterojunction bipolar transistor'20077,049,201'Method and apparatus for a heterojunction bipolar transistor using self-aligned epitaxy'20067,022,578'Heterojunction bipolar transistor using reverse emitter window'20066,972,237'Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth'20056,924,202'Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact'20056,908,824'Self-aligned lateral heterojunction bipolar transistor'20056,709,918'Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology'20046,534,393'Method for fabricating local metal interconnections with low contact resistance and gate electrodes with improved electrical conductivity'20036,524,963'Method to improve etching of organic-based, low dielectric constant materials'20036,489,191'Method for forming self-aligned channel implants using a gate poly reverse mask'20026,410,394'Method for forming self-aligned channel implants using a gate poly reverse mask'20026,395,631'Low dielectric constant dielectric layer fabrication method employing hard mask layer delamination'20026,140,206'Method to form shallow trench isolation structures'20005,948,701'Self-aligned contact (SAC) etching using polymer-building chemistry'19995,930,627'Process improvements in self-aligned polysilicon MOSFET technology using silicon oxynitride'19995,792,692'Method of fabricating a twin hammer tree shaped capacitor structure for a dram device'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2007Patents assigned to CHARTERED SEMICONDUCTOR MFG (15)· patent assignee history
1998–2007Based in Singapore, SG· patent location history
2006Patents assigned to CHARTERED SEMIONDUCTOR MFG LTD (1)· patent assignee history
2016–2017Patents assigned to LI JIAN (2)· patent assignee history
2016Based in Chengdu, CN· patent location history
2017–2018Patents assigned to SHENZHEN SMOORE TECHNOLOGY LTD (2)· patent assignee history
2017–2018Based in Changsha, CN· patent location history
2021Patents assigned to BEIJING RES INST CHEMICAL IND CHINA PETROLEUM & CHEMICAL CORP (1)· patent assignee history
2021Based in Jiangsu, CN· patent location history
2021Based in Beijing, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHARTERED SEMICONDUCTOR MFG | 15 | 1998–2007 |
| LI JIANself | 2 | 2016–2017 |
| SHENZHEN SMOORE TECHNOLOGY LTD | 2 | 2017–2018 |
| BEIJING RES INST CHEMICAL IND CHINA PETROLEUM & CHEMICAL CORP | 1 | 2021 |
| CHARTERED SEMIONDUCTOR MFG LTD | 1 | 2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| Singapore, SG | 16 | 1998–2007 |
| Changsha, CN | 2 | 2017–2018 |
| Jiangsu, CN | 1 | 2021 |
| Beijing, CN | 1 | 2021 |
| Chengdu, CN | 1 | 2016 |