Inventor
Shirou Ozaki
Inventor
Yamato, JP
Overview
Patents· 52 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10DInorganic electric semiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H01LSemiconductor devices17%
H03FAmplifiers7%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems6%
C09DCoating compositions, e.g. paints, varnishes or lacquers3%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds2%
C08LCompositions of macromolecular compounds2%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications2%
PatentTitleYear
10,796,917Method for manufacturing gate insulator for HEMT202010,680,073Semiconductor device and manufacturing method thereof202010,508,343Etching method for manufacturing semiconductor device201910,468,514Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier201910,312,344Semiconductor device, manufacturing method of semiconductor device, power unit, and amplifier201910,312,094AlO201910,276,671Semiconductor device, method for manufacturing semiconductor device, and electronic device201910,276,703Compound semiconductor device and method of manufacturing the same201910,192,964Compound semiconductor device and method of manufacturing the same201910,084,059Semiconductor device and manufacturing method of semiconductor device201810,056,460Semiconductor device and manufacturing method thereof201810,043,727Compound semiconductor device and method of manufacturing the same201810,043,897Semiconductor device and method of fabricating semiconductor device201810,002,942Semiconductor device and method of manufacturing semiconductor device20189,966,463Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole20189,941,401Semiconductor device, power supply apparatus and high-frequency amplifier20189,779,933'Semiconductor device and method of manufacturing semiconductor device'20179,755,061'Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier'20179,691,605'Semiconductor device and method of manufacturing semiconductor device'20179,660,065'Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole'20179,647,084'Semiconductor device and method of manufacturing the same'20179,608,083'Semiconductor device'20179,553,152'Semiconductor device'20179,412,830'Semiconductor device and method of manufacturing semiconductor device'20169,324,808'Semiconductor device, power-supply unit, amplifier and method of manufacturing semiconductor device'20169,306,052'Compound semiconductor device and method of manufacturing the same'20169,257,514'Semiconductor device with plural electrodes formed on substrate'20169,209,042'Compound semiconductor device and manufacturing method therefor'20159,165,851'Semiconductor device, method for manufacturing the same, power supply apparatus and high-frequency amplification unit'20159,035,353'Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the same'20159,035,357'Compound semiconductor device and manufacturing method therefor'20158,956,967'Method of forming an interconnection structure'20158,866,157'Semiconductor device and method of fabricating the semiconductor device'20148,815,017'Method of manufacturing semiconductor device and method of cleaning semiconductor substrate'20148,791,465'Compound semiconductor device and manufacturing therefor'20148,716,209'Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device'20148,709,886'Compound semiconductor device and manufacturing method therefor'20148,637,409'Etching method, method for manufacturing semiconductor device, and etching device'20148,580,907'Insulating film material, multilayer wiring board and production method thereof, and semiconductor device and production method thereof'20138,487,384'Semiconductor device, power-supply unit, amplifier and method of manufacturing semiconductor device'20138,461,041'Semiconductor device and method of manufacturing semiconductor device'20138,431,464'Process for producing silicic coating, silicic coating and semiconductor device'20138,390,099'Interconnection substrate having first and second insulating films with an adhesion enhancing layer therebetween'20138,207,059'Silicon compound, ultraviolet absorbent, method for manufacturing multilayer wiring device and multilayer wiring device'20127,985,700'Composition for forming insulating film and method for fabricating semiconductor device'20117,875,981'Insulating film material, multilayer interconnection structure, method for manufacturing same, and method for manufacturing semiconductor device'20117,830,012'Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device'20107,728,065'Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device'20107,655,576'Insulator film, manufacturing method of multilayer wiring device and multilayer wiring device'20107,541,296'Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device'20097,476,970'Composition for forming insulating film and method for fabricating semiconductor device'20097,262,142'Semiconductor device fabrication method'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2020Patents assigned to FUJITSU LTD (50)· patent assignee history
2007–2019Based in Kawasaki, JP· patent location history
2012–2015Patents assigned to OZAKI SHIROU (15)· patent assignee history
2012–2015Patents assigned to NAKATA YOSHIHIRO (7)· patent assignee history
2013–2014Patents assigned to KOBAYASHI YASUSHI (5)· patent assignee history
2013–2015Patents assigned to MINOURA YUICHI (5)· patent assignee history
2014–2020Based in Yamato, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJITSU LTD | 50 | 2007–2020 |
| OZAKI SHIROUself | 15 | 2012–2015 |
| NAKATA YOSHIHIRO | 7 | 2012–2015 |
| KOBAYASHI YASUSHI | 5 | 2013–2014 |
| MINOURA YUICHI | 5 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yamato, JP | 30 | 2014–2020 |
| Kawasaki, JP | 22 | 2007–2019 |