Inventor
Meng Ding
Inventor
Sunnyvale, CA, US
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
H10BElectronic memory devices20%
G11BInformation storage based on relative movement between record carrier and transducer14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
Y10TTechnical subjects covered by former us classification7%
G11CStatic stores6%
H01LSemiconductor devices6%
B23KSoldering or unsoldering3%
B82YSpecific uses or applications of nanostructures3%
G01RMeasuring electric variables3%
PatentTitleYear
10,723,029Safety protection method of dynamic detection for mobile robots202010,622,370System and method for manufacturing self-aligned STI with single poly20209,276,007'System and method for manufacturing self-aligned STI with single poly'20169,190,531'Flash memory cell with flair gate'20158,809,936'Memory cell system with multiple nitride layers'20148,803,216'Memory cell system using silicon-rich nitride'20148,642,441'Self-aligned STI with single poly for manufacturing a flash memory device'20148,587,049'Memory cell system with charge trap'20138,404,541'Strapping contact for charge protection'20138,367,537'Flash memory cell with a flair gate'20138,143,661'Memory cell system with charge trap'20128,031,528'Flash memory programming and verification with reduced leakage current'20117,750,407'Strapping contact for charge protection'20107,630,253'Flash memory programming and verification with reduced leakage current'20097,573,103'Back-to-back NPN/PNP protection diodes'20097,564,091'Memory device and methods for its fabrication'20097,538,383'Two-bit memory cell having conductive charge storage segments and method for fabricating same'20097,469,465'Method of providing a low-stress sensor configuration for a lithography-defined read sensor'20087,463,525'Negative wordline bias for reduction of leakage current during flash memory operation'20087,463,459'Self-pinned read sensor design with enhanced lead stabilizing mechanism'20087,432,156'Memory device and methods for its fabrication'20087,394,702'Methods for erasing and programming memory devices'20087,365,389'Memory cell having enhanced high-K dielectric'20087,346,977'Method for making a magnetoresistive read head having a pinned layer width greater than the free layer stripe height'20087,345,853'Device with ESD protection utilizing a shorting material between electrical pads or leads which are shorted then unshorted by severing the shorting material and then recreating the short by reapplying the shorting material'20087,339,222'Method for determining wordline critical dimension in a memory array and related structure'20087,291,279'Method of making a read sensor while protecting it from electrostatic discharge (ESD) damage'20077,285,827'Back-to-back NPN/PNP protection diodes'20077,236,334'Repeatable ESD protection utilizing a process for unshorting a first shorting material between electrical pads and reshorting by recreating the short'20077,206,172'Electrical lapping guide embedded in a shield of a magnetic head'20077,199,986'Magnetoresistive sensor with decoupled hard bias multilayers'20077,072,156'Method for biasing magnetoresistive sensor with decoupled hard bias multilayers'20067,062,838'Method of forming an embedded read element'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2008Patents assigned to HITACHI GLOBAL STORAGE TECH (10)· patent assignee history
2006–2009Based in Mountain View, CA, US· patent location history
2007–2016Patents assigned to SPANSION LLC (21)· patent assignee history
2008–2014Patents assigned to ADVANCED MICRO DEVICES INC (4)· patent assignee history
2008–2020Based in Sunnyvale, CA, US· patent location history
2010–2015Based in San Jose, CA, US· patent location history
2012–2014Patents assigned to DING MENG (7)· patent assignee history
2012–2014Patents assigned to CHANG KUO-TUNG (4)· patent assignee history
2020Based in Hangzhou, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SPANSION LLC | 21 | 2007–2016 |
| HITACHI GLOBAL STORAGE TECH | 10 | 2006–2008 |
| DING MENGself | 7 | 2012–2014 |
| ADVANCED MICRO DEVICES INC | 4 | 2008–2014 |
| CHANG KUO-TUNG | 4 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sunnyvale, California, US | 16 | 2008–2020 |
| Mountain View, California, US | 12 | 2006–2009 |
| San Jose, California, US | 4 | 2010–2015 |
| Hangzhou, CN | 1 | 2020 |