Inventor
Wei Yi
Inventor
Mountain View, CA, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores19%
H01LSemiconductor devices14%
H10BElectronic memory devices13%
H10NElectric solid-state devices not otherwise provided for13%
H10DInorganic electric semiconductor devices10%
H03KPulse technique5%
F21SNon-portable lighting devices3%
F21VFunctional features or details of lighting devices or systems thereof3%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light3%
G01MTesting static or dynamic balance of machines or structures3%
PatentTitleYear
10,600,961Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance202010,541,274Scalable, stackable, and BEOL-process compatible integrated neuron circuit202010,473,843Backlight module and display device2019D0864345Gun magnet mounting device201910,297,751Low-voltage threshold switch devices with current-controlled negative differential resistance based on electroformed vanadium oxide layer201910,151,868Backlight module and display device20189,478,738'High-reliability high-speed memristor'20169,337,146'Three-dimensional integrated circuit stack'20169,324,421'Method and circuit for switching a memristive device'20169,276,204'Memristor with channel region in thermal equilibrium with containing region'20169,165,645'High-reliability high-speed memristor'20159,082,972'Bipolar resistive switch heat mitigation'20158,971,091'Method and circuit for switching a memristive device in an array'20158,923,034'Multi-level memory cell with continuously tunable switching'20148,830,727'Multi-level memory cell with continuously tunable switching'20148,766,231'Nanoscale electronic device with barrier layers'20148,525,553'Negative differential resistance comparator circuits'20138,503,217'Reconfigurable crossbar memory array'20138,336,217'Node placement apparatus, system and method'20128,331,129'Memory array with write feedback'20128,325,507'Memristors with an electrode metal reservoir for dopants'20128,324,976'Oscillator circuitry having negative differential resistance'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2019Patents assigned to YI WEI (14)· patent assignee history
2012–2015Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (12)· patent assignee history
2012–2016Patents assigned to YANG JIANHUA (8)· patent assignee history
2012–2016Patents assigned to RIBEIRO GILBERTO MEDEIROS (6)· patent assignee history
2012–2016Patents assigned to PICKETT MATTHEW D (4)· patent assignee history
2012–2016Based in Mountain View, CA, US· patent location history
2016Based in San Diego, CA, US· patent location history
2018–2019Based in Jiangsu, CN· patent location history
2019–2020Based in Moorpark, CA, US· patent location history
2019Based in Guangdong, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YI WEIself | 14 | 2012–2019 |
| HEWLETT PACKARD DEVELOPMENT CO | 12 | 2012–2015 |
| YANG JIANHUA | 8 | 2012–2016 |
| RIBEIRO GILBERTO MEDEIROS | 6 | 2012–2016 |
| PICKETT MATTHEW D | 4 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Mountain View, California, US | 14 | 2012–2016 |
| Moorpark, California, US | 3 | 2019–2020 |
| Jiangsu, CN | 2 | 2018–2019 |
| Guangdong, CN | 1 | 2019 |
| San Diego, California, US | 1 | 2016 |