Inventor
Suk-jin Chung
Inventor
Gyeonggi-do, KR
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices31%
H10BElectronic memory devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H01LSemiconductor devices7%
C23CCoating metallic material6%
B28BShaping clay or other ceramic compositions2%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for2%
B62DMotor vehicles2%
E04GScaffolding2%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
10,526,706Gas supply unit and thin film deposition apparatus including the same20209,685,498'Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same'20179,412,583'Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same'20169,076,647'Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layer'20158,318,560'Methods of forming integrated circuit devices including a capacitor'20128,264,026'Nonvolatile memory devices and methods of manufacturing the same'20127,842,581'Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layers'20107,700,454'Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities'20107,531,861'Trench capacitors with insulating layer collars in undercut regions'20097,416,904'Method for forming dielectric layer of capacitor'20087,361,548'Methods of forming a capacitor using an atomic layer deposition process'20087,354,821'Methods of fabricating trench capacitors with insulating layer collars in undercut regions'20087,335,550'Methods for forming semiconductor devices including thermal processing'20087,271,055'Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors'20077,172,946'Methods for forming semiconductor devices including thermal processing'20077,091,102'Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby'20067,049,232'Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same'20067,034,350'Capacitors including a cavity containing a buried layer'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (18)· patent assignee history
2006–2010Based in Suwon-si, KR· patent location history
2006–2008Based in Kyungki-do, KR· patent location history
2007–2012Based in Gyeonggi-do, KR· patent location history
2012–2016Patents assigned to CHUNG SUK-JIN (4)· patent assignee history
2012–2015Patents assigned to YOO CHA-YOUNG (2)· patent assignee history
2012–2020Based in Hwaseong-si, KR· patent location history
2015–2016Patents assigned to KANG SANG-YEOL (2)· patent assignee history
2015–2016Patents assigned to KIM YOUN-SOO (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 18 | 2006–2020 |
| CHUNG SUK-JINself | 4 | 2012–2016 |
| KANG SANG-YEOL | 2 | 2015–2016 |
| KIM YOUN-SOO | 2 | 2015–2016 |
| YOO CHA-YOUNG | 2 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 6 | 2007–2012 |
| Hwaseong-si, KR | 5 | 2012–2020 |
| Suwon-si, KR | 4 | 2006–2010 |
| Kyungki-do, KR | 3 | 2006–2008 |