Inventor
Wontae Noh
Inventor
Seoul, KR
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material20%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H01LSemiconductor devices9%
H10DInorganic electric semiconductor devices9%
C09DCoating compositions, e.g. paints, varnishes or lacquers8%
H10BElectronic memory devices5%
C04BLime, magnesia4%
C07CAcyclic or carbocyclic compounds4%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients4%
PatentTitleYear
10,895,012Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same202110,465,289Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same201910,364,259Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same201910,337,104Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same201910,174,423Niobium-containing film forming compositions and vapor deposition of Niobium-containing films201910,106,887Group 5 transition metal-containing compounds for vapor deposition of group 5 transition metal-containing films201810,023,462Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films20189,786,671'Niobium-containing film forming compositions and vapor deposition of niobium-containing films'20179,748,249'Tantalum-containing film forming compositions and vapor deposition of tantalum-containing films'20179,711,347'Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films'20179,691,771'Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films'20179,691,770'Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films'20179,518,075'Group 5 cyclopentadienyl transition metal-containing precursors for deposition of group 5 transition metal-containing films'20169,384,963'Preparation of cerium-containing precursor and deposition of cerium-containing films'20168,809,849'Preparation of cerium-containing precursors and deposition of cerium-containing films'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2017Patents assigned to AIR LIQUIDE AMERICAN (3)· patent assignee history
2014Based in Houston, TX, US· patent location history
2016–2017Patents assigned to L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (5)· patent assignee history
2016–2021Based in Seoul, KR· patent location history
2017Patents assigned to L'AIR LIQUIDE SOCIÉTÉ ANONYME L'ETUDE ET L'EXPLOITATION DES PROCÉDÉS GEORGES CLAUDE (1)· patent assignee history
2018–2021Patents assigned to AIR LIQUIDE (7)· patent assignee history
2019Patents assigned to LAIR LIQUIDE SA POUR LETUDE AT LEXPLOITATION DES PROCEDES GEORGES CLAUDE (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AIR LIQUIDE | 7 | 2018–2021 |
| L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | 5 | 2016–2017 |
| AIR LIQUIDE AMERICAN | 3 | 2014–2017 |
| L'AIR LIQUIDE SOCIÉTÉ ANONYME L'ETUDE ET L'EXPLOITATION DES PROCÉDÉS GEORGES CLAUDE | 1 | 2017 |
| LAIR LIQUIDE SA POUR LETUDE AT LEXPLOITATION DES PROCEDES GEORGES CLAUDE | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 14 | 2016–2021 |
| Houston, Texas, US | 1 | 2014 |